Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM

Agashe, Kirti; Sarwade, Nisha; Joshi, Sangeeta; Thakurdesai, Madhavi; Surwase, Smita; Tirmali, Pravin M.; Asokan, K.

doi:10.1016/j.nimb.2017.04.091

Cited by 23 publications

(8 citation statements)

References 26 publications

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“…For doses higher than 25 kGy the switching characteristic disappeared. 11 W. Duan et al also founded a decrease in the resistance value during both HRS and LRS operation for WO x film-based RRAMs. 12 However, in the case of HfO 2 , the impact of radiation in the electrical characteristics has been found to be lower: S-H. Lin et al founded no significant differences in the HRS and LRS values when the samples were -irradiated up to doses of 5 Mrads.…”

Section: Introductionmentioning

confidence: 96%

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

García

González

Mallol

et al. 2018

Journal of Elec Materi

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The -radiation effects on the electrical characteristics of MIS capacitors based on HfO 2 , and on the resistive switching characteristics of the structures have been studied. The HfO 2 was grown directly on silicon substrates by atomic layer deposition. Some of the capacitors were submitted to a  ray irradiation using three different doses (16, 96 and 386 kGy). We studied the electrical characteristics in the pristine state of the capacitors. The radiation increased the interfacial state densities at the insulator/semiconductor interface, and the slow traps inside the insulator near the interface. However, the leakage current is not increased by the irradiation, and the conduction mechanism is Poole-Frenkel for all the samples. The switching characteristics were also studied, and no significant differences were obtained in the performance of the devices after having been irradiated, indicating that the fabricated capacitors present good radiation hardness for its use as a RS element.

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Section: Introductionmentioning

confidence: 96%

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

García

González

Mallol

et al. 2018

Journal of Elec Materi

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“…11(b)], nonlattice oxygen can recombine with oxygen vacancies in the filament and cause rupturing. Changes in crystallisation phase, dependent on radiation dose, in TiO x have been reported more recently [114]. The radiation effect on crystallisation is an interesting topic on its own right, and shedding light on this mechanism can further aid in choosing appropriate materials for TID hardened applications.…”

Section: Resistive Random Access Memorymentioning

confidence: 94%

“…A large amount of work, however, does report radiation effects in VCM memory at high doses which include changes in voltages, resistance, and in some cases, a complete switch of state [92], [93], [96], [102], [103], [106], [109], [111]- [114]. In these cases, it is thought that the induced charge and oxygen vacancies interfere with the conductive filament switching mechanism and/or the resistance of the oxide.…”

Section: Resistive Random Access Memorymentioning

confidence: 99%

“…Many mechanisms have been proposed. These mechanisms include trapping of radiation-induced charge at preexisting or radiation generated oxygen vacancies or defects and alteration or creation of internal electric fields and transient currents [92], [93], [96], [102], [104]- [106], [109], [111]- [114]. This can lead to obstruction of oxygen vacancy movement or joule heating which can, in turn, lead to the creation of additional oxygen vacancies [92], [102], [104], [115].…”

Section: Resistive Random Access Memorymentioning

confidence: 99%

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Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Chatzikyriakou

Morgan

Groot

2018

IEEE Trans. Electron Devices

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-From man-made satellites and interplanetary missions to fusion power plants, electronic equipment that needs to withstand various forms of irradiation is an essential part of their operation. Examination of total ionizing dose (TID) effects in electronic equipment can provide a thorough means to predict their reliability in conditions where ionizing dose becomes a serious hazard. In this paper, we provide a historical overview of logic and memory technologies that made the biggest impact both in terms of their competitive characteristics and their intrinsically hardened nature against TID. Further to this, we also provide guidelines for hardened device designs and present the cases where hardened alternatives have been implemented and tested in the lab. The technologies that we examine range from silicon-on-insulator and FinFET to 2-D semiconductor transistors and resistive random access memory.Index Terms-2-D semiconductor, carbon, CMOS, deep submicrometer, FinFET, graphene, MoS2, resistive random access memory (RRAM), silicon-on-insulator (SOI), thin film, total ionizing dose (TID), ultrathin buried oxide (UTBOX).

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“…Rises in the RMS values after the gamma irradiation exposures indicate the presence of the gamma irradiationinduced surface damage. The crystallization of the amorphous track causes volume expansion [23]. This crystallization, e.g., the increment of the grain size, modifies the surface morphology of the Dy2O3/Si thin films [19], [23].…”

Section: Irradiation-induced Changes On the Crystallographic And Morphological Characteristics Dy2o3/si Thin Filmsmentioning

confidence: 99%

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

Gürer¹,

Yılmaz²

2020

RAP 2019 Conference Proceedings

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In this study, the effects of gamma irradiation on the physical, electrochemical, and electrical properties of Dy2O3/p-Si thin films have been studied. For this, the rare earth oxide (Dy2O3) was deposited onto p-Si wafer by using an e-beam evaporation technique. The evolutions on the crystallographic and morphologic characteristics of the films under gamma irradiation were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively, while irradiation effects on the electrochemistry of the films were characterized by X-ray photoelectron spectroscopy (XPS). Furthermore, variations on the electrical characteristics of Dy2O3/p-Si thin films were also specified by Capacitance-Voltage (C-V) and Conductance-Voltage (G/ω-V) measurements. No significant changes on the crystallographic orientation were observed after gamma irradiation exposures. However, the grain size of the films was increased slightly due to the fact that the local heating aggregated the smaller grains into a bigger cluster. In addition, the surface roughness was increased after irradiation indicating that it deforms the films' surface morphology. Two different intense intermixing phases revealed the presence of the electrochemical analysis of the virgin Dy2O3/p-Si thin films. These phases are Dysprosium sub-Oxide (DyxOy) and Oxygen deficient in Dy2O3 films. After irradiation exposures, Oxygen incorporation, vacancy, and interstitial defects formation were observed in the electrochemical characteristics of the films. On the other hand, the capacitance curves exhibit kinks in the region between depletion and accumulation due to the presence of the intermixing phases of Dy2O3 films. The capacitance of samples significantly increased with the increase of radiation doses, which are correlated with the generated interface state density and/or improvement of dielectric characteristics of Dy2O3 owing to Oxygen diffusion.

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Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM

Cited by 23 publications

References 26 publications

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )

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Effect of gamma irradiation on resistive switching of Al/TiO 2 /n + Si ReRAM

Cited by 23 publications

References 26 publications

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications

Total Ionizing Dose Hardened and Mitigation Strategies in Deep Submicrometer CMOS and Beyond

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy 2 O 3 )

Contact Info

Product

Resources

About

Co-60 GAMMA RADIATION INFLUENCES ON THE ELECTROCHEMICAL, PHYSICAL AND ELECTRICAL CHARACTERISTICS OF RARE-EARTH DYSPROSIUM OXIDE (Dy ₂ O ₃ )