Abstract:In this study, the effects of gamma irradiation on the physical, electrochemical, and electrical properties of Dy2O3/p-Si thin films have been studied. For this, the rare earth oxide (Dy2O3) was deposited onto p-Si wafer by using an e-beam evaporation technique. The evolutions on the crystallographic and morphologic characteristics of the films under gamma irradiation were analyzed by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM), respectively, while irradiation effects on the electrochemistry of t… Show more
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