In the presented work, the parameters of a new MAPD-3NM-II photodiode with buried pixel structure manufactured in cooperation with Zecotek Company are investigated. The photon detection efficiency, gain, capacitance and gamma-ray detection performance of photodiodes are studied. The SPECTRIG MAPD is used to measure the parameters of the MAPD-3NM-II and scintillation detector based on it. The obtained results show that the newly developed MAPD-3NM-II photodiode outperforms its counterparts in most parameters and it can be successfully applied in space application, medicine, high-energy physics and security.
In this study, the electrical characteristics and surface morphology of Vanadium Oxide-VO2 MOS Devices have been investigated. VO2 thin films were deposited onto n-type (100) silicon wafers by using the RF magnetron sputtering system. Thin films were annealed at different temperatures in the Argon environment. The FTIR and XRD measurements were performed to check the surface morphology, crystal structure and bond structures of VO2 thin films, respectively. Except from the sample that was annealed at 700°C, the VO2 thin films showed amorphous structure. In the ATR-FTIR analysis, V-O-V bending mode at 617 cm -1 and V=O stretching vibrations at 990 cm -1 were seen on vanadium oxide thin films. While analyzing the electrical characteristics, it has been noticed that annealing had effects on the C-V and G/w-V curves. The obtained results demonstrate that VO2 may have the potential to be used in MOS-based applications.
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