Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)

Gürer, Umutcan; Yılmaz, Ozan; Karaçalı, H.; Kaya, Şenol; Yılmaz, Ercan

doi:10.1016/j.radphyschem.2020.108684

Cited by 14 publications

(10 citation statements)

References 28 publications

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“…It is noted that this weak peak results from the low concentration of Dy 3+ in the preparation process of the measured sample. In the high-resolution pattern (Figure b), the peaks assigned to Dy 4d 5/2 and 4d 3/2 are at 157.4 and 154.0 eV, which are almost consistent with the locations of the Dy–O bond . The peaks of O 1s were further analyzed to understand the formation of the Dy–O bond (Figure c).…”

Section: Resultsmentioning

confidence: 83%

“…In the highresolution pattern (Figure 7b), the peaks assigned to Dy 4d 5/2 and 4d 3/2 are at 157.4 and 154.0 eV, which are almost consistent with the locations of the Dy−O bond. 46 The peaks of O 1s were further analyzed to understand the formation of the Dy−O bond (Figure 7c). The O 1s peak of UiO-66-(COOH) 2 -B10 presents the shoulder shape, and the O atom in this MOF includes four types: Zr−O−Zr, CO, Zr−O−C, and C−OH.…”

Section: Adsorption Mechanismmentioning

confidence: 99%

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Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺

Pei

Zhao

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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The adsorption and recovery of dysprosium ions (Dy3+) from industrial wastewater are necessary but still challenging. Herein, we constructed a series of defect-containing metal–organic frameworks (MOFs) [UiO-66-(COOH)2] using sodium benzoate (BCNa) as a modulator. Upon the formation of defects, the porosity and surface charge properties of the MOFs were improved, leading to a higher utilization ratio of active groups and higher adsorption capacities for Dy3+. The synthesized UiO-66-(COOH)2-B10 with an optimal addition of BCNa exhibited a superior adsorption capacity of 150.6 mg g–1. Fast adsorption occurred at ∼5 min, and equilibrium was reached at ∼60 min. Higher pH and temperature were found to be beneficial for boosting Dy3+ adsorption, and selective adsorption over other metal ions was achieved in a multicomponent solution. Further, FTIR spectroscopy and XPS investigations indicate that free carboxyl contributes to the capture of Dy3+. Thus, this work provides a promising strategy to enhance the utilization ratio of active groups and further adsorption performance.

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Section: Resultsmentioning

confidence: 83%

Section: Adsorption Mechanismmentioning

confidence: 99%

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺

Pei

Zhao

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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“…Because of gamma irradiation exposures, no major variations in the crystallographic direction were noticed. The capacitance of samples fundamentally expanded with the expanding doses, which are associated with the produced interface state thickness as well as the progress of the dielectric constant of Dy 2 O 3 owing to oxygen dissemination . Moreover, the electrical and chemical characteristics of La 2 O 3 thin films on Si(100) substrates after and before post-tempering in ambient N 2 have been examined.…”

Section: Electronic Devicesmentioning

confidence: 95%

“…The capacitance of samples fundamentally expanded with the expanding doses, which are associated with the produced interface state thickness as well as the progress of the dielectric constant of Dy 2 O 3 owing to oxygen dissemination. 94 95 The synthesis of temperature-reliant Sm 3+based compounds (i.e., compound 1), as demonstrated in Figure 12, showed a high dielectric constant with the increasing temperature. 34 However, the relative permittivity decreased with frequency.…”

Section: Electronic Devicesmentioning

confidence: 99%

“…The irradiation tolerance of the MOS-based devices and degradation mechanism of the Dy 2 O 3 dielectrics outcome demonstrates the potential future electronic applications where the irradiation field is high . Moreover, in contrast for electrical estimations of all the samples, a sample of 600 °C toughened is enhanced, as well as having lower leakage current density, the smallest hysteresis, and the highest dielectric constant.…”

Section: Electronic Devicesmentioning

confidence: 99%

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Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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Rare earth oxides (REOs) are deemed important from both industrial implementation and research insight perspectives. One of the most conspicuous attributes of REOs is sensing, which contributes significantly to the development of diversified and robust systems of sensors and detector devices. However, there has not been any organized review that has pointed out critical insights from the sensor, detector, and electronic device perspectives that can invoke further studies to investigate the prospective and commercially relevant areas to date. To address this limitation, this review undertakes a focused report approach. From this concise yet comprehensive review, it has been prominent that the most significant contributions to the sensing and detecting fields by the REOs are in electrochemical, temperature, humidity, radiation, gas, and biosensors. Moreover, in terms of electronic device development, REOs have had a significant impact on memory devices, metal oxide semiconductors, dielectric materials, capacitors, energy storage devices, and so on. Furthermore, one of the key findings of the study is that the REOs have flexible doping (e.g., Er3+, Yb3+, Y3+, etc.) capability combined with other host materials such as HfO2 film, SiO2 stacks, TiO2, SnO2 nanostructures, etc., which will likely make REO-based electrochemical sensor and biosensor development the most promising sector in the coming years. Despite the impressive aspects, biocompatibility issues in several biological and biomedical systems along with the hygroscopic nature of REOs in electronic devices remain as concerns. However, these issues can be addressed by the advancement of intricate technologies such as targeted manipulation of the electronic configuration of REOs, multifarious doping experiments to obtain alternative mechanisms, etc. to obtain superior biocompatibility, and device development systems that are noninvasive to the environment. From the commercialization front, memory devices and energy storage devices will be the focusing points for large-scale investors due to improved mechanical (i.e., Young’s modulus, intrinsic stress, etc.) and electrical (i.e., high dielectric constant, resistivity, relative permittivity, etc.) properties, while REO-based metal oxide semiconductor and capacitor development is likely to be research-oriented for the next few years before making the eventual move to futuristic applications at a large industrial scale. In short, this review reports a substantial number of relevant studies that will pave the way for further experimental and computational investigations on REOs and their sensor, detector, and electronic device aspects.

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Sensitivity estimation of indium oxide thin film for gamma sensing

et al. 2023

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This article aims to study the modification in the structural, optical and electrical properties of indium oxide thin film after gamma irradiation and estimation of sensitivity for gamma sensing applications. The thin film of indium oxide was deposited on a 450 °C preheated glass substrate using the spray pyrolysis technique. The deposited thin film of molar concentration 0.15 M and thickness of around 600 nm was irradiated with different gamma doses (100 Gy, 200 Gy, 300 Gy and 400 Gy). The optical properties of the irradiated film are studied using UV–Visible spectroscopy. Transmittance increased after irradiation up to 200 Gy and beyond that, it decreased. Indium oxide is an n-type semiconductor which exhibits both direct and indirect transitions. Both direct and indirect bandgap energy are calculated using Tauc’s plot. Extinction coefficient and refractive index variation with irradiation were also estimated. Photoluminescence study confirmed the gamma-induced defect formation and annihilation for an irradiation dose of 400 Gy and 200 Gy, respectively. Resistivity also decreased up to 200 Gy and beyond that, it increased. The sensitivity of the deposited film was estimated from the electrical measurements, and it lies between 10.7 and 53.4 mA/cm2/Gy. Graphical abstract

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Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)

Cited by 14 publications

References 28 publications

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Sensitivity estimation of indium oxide thin film for gamma sensing

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Co-60 gamma radiation influences on the electrochemical, physical and electrical characteristics rare-earth dysprosium oxide (Dy2O3)

Cited by 14 publications

References 28 publications

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy3+

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy3+

Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Sensitivity estimation of indium oxide thin film for gamma sensing

Contact Info

Product

Resources

About

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺

Rationally Tailoring Pore and Surface Properties of Metal–Organic Frameworks for Boosting Adsorption of Dy³⁺