Effect of floating-body charge on SOI MOSFET design

Physical analysis, trimming and editing of nanoscale IC function with backside FIB processing

“…7 shows the output-characteristics of an n-FET exposed to FIB thinning. The first major change occurs when the remaining Si falls below 600 nm with an increase of I Dmax and the appearance of the ''Kink-Effect" [4]. With the next thinning steps, the DC performance steadily decreases to less than 20% of its initial performance with t Si $ 150 nm.…”

“…), resulting in reduced carrier lifetime and mobility in the surface near region (illustrated by the pink gradient). The device is gradually changed into an SOI like structure, where the increase of R well finally initiates floating body effects [4]. Since the penetration depth and quantity of the additional crystalline defects is not known precisely, the resulting R well cannot be extracted via calculation.…”

A simple method to determine the floating-body voltage of SOI CMOS devices

“…Floating body (FB) design configuration is more desirable in high-density applications [6]. However, FB device design suffers from various effects, such as drain ( ) induced fluctuations in body potential [7]. Depending on the device bias condition, the body potential may attain a steady-state positive value leading to larger on-state and/or off-state current values [8], [9].…”

Estudo teórico-experimental do transitório da corrente de dreno e do tempo de vida de geração em tecnologias SOI MOSFETs.

“…Contudo, o uso de contato de corpo nas estruturas SOI não é desejável, pois estes consomem uma área extra aumentando a complexidade do "layout" 35 .…”