Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing

Abstract

The Green function theory developed in a previous paper for one-magnon light scattering from antiferromagnets with single-ion anisotropy is extended to apply to the spin-flop and the paramagnetic phases. The results obtained are applicable for general temperature T and applied field H throughout the H-T phase diagram of the antiferromagnet. Numerical calculations are made to deduce the light scattering intensity for the spin S = 1 antiferromagnets K,NiF, and NiO.

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Fig. 25a shows the HRTEM image of the poly-Si/ HfAlON/interfacial-layer(IL)/p-Si structure after annealing at 1000°C for 30 s [154]. An amorphous structure of HfAlON film appeared at the composition of Hf ration = 35% and N = 32%.…”

Spectroscopic analysis of Al and N diffusion in HfO2

“…This is highly desirable since grain boundaries in crystallized HfO 2 can act as diffusion paths for metal gate elements to migrate into the substrate/high-k interfacial layer, in close proximity to the channel region, and degrade device mobility. 14,15 This work addresses the impact of Al and N on the evolution of HfO 2 crystalline polymorphs which strongly influence the resultant dielectric constant (monoclinic: m-HfO 2 $ 16-18, tetragonal: t-HfO 2 $ 28-29). 16 By capturing elemental depth distribution profiles, chemical state changes, and microstructure variations following each process step, the impact of Al and N diffusion and redistribution is presented.…”

Hafnium-Based Gate Dielectric Materials

“…However, impurity penetration phenomena such as boron diffusion, which is problematic for poly/high-k gate stack, are hardly suppressed in HfAlO system [115] because of the limited impurity diffusion barrier characteristics of Al 2 O 3 [116]. Moreover, phase separation between HfO 2 and Al 2 O 3 accompanied by HfO 2 crystallization occurs as in the case of HfSiO, when HfO 2 content is large relative to Al 2 O 3 [111] and this partial crystallization may cause the inhomogeneity and the enlargement of the leakage current through HfAlO after the high-temperature annealing [117].…”

“…Nitrogen incorporation is realized by co-sputtering of HfO 2 and Al 2 O 3 in Ar/O 2 /N 2 ambient [115], or NH 3 annealing during or after the HfAlO deposition process [111]. Nitrogen incorporation is effective for suppressing the boron diffusion [115]. It is also effective for enhancing the crystallization temperature [111].…”