Effect of C/Si ratio on the characteristics of 3C-SiC films deposited on Si(100) base on the four-step non-cooling process

Zhao, Zhiying; Li, Yun; Yin, Zhong‐Ping; Li, Zhonghui

doi:10.1016/j.spmi.2016.03.033

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…According to the view of Zhao Z.F., the high C/Si ratio seem to enhance the arrangement of the well-regulated pattern on Si (100). This means that higher C/Si Moore ratios will decrease the surface free energy [20]. In the Fig.…”

Section: Resultsmentioning

confidence: 94%

“…Due to the anisotropic growth rates, the 3C-SiC nuclei gradually expand into a pyramidal-like shape with 3C-SiC. Thus, a mosaic-like surface suggested the typical antiphase domain boundaries characteristic of 3C-SiC films [20]. With C/Si Moore ratio increasing from 0.8 to 1.4, 1.6, respectively, the surface roughness of 3C-SiC films decreased from 80 nm to 12 nm, 3.6 nm, respectively.…”

Section: Resultsmentioning

confidence: 96%

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Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Mao

Wang

et al. 2017

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A modified two-step carbonization process was used to grow high oriented 3C-SiC films on Si (100) substrates by using SiH4 and C3H8 as precursors. The investigation revealed that the C/Si Moore ratio has important influence on the SiC nucleation model on Si substrates and the crystal quality of 3C-SiC films. The effect of C/Si Moore ratio on the SiC/Si (100) were evaluated by Microscopy and SEM. This indicated that the growth model of the individual nuclei gradually changed from vertical to lateral growth as the C/Si Moore ratio increased. High-resolution X-ray diffraction and Raman spectra were used to analyze the crystalline quality of 3C-SiC films grown at 1385 °C under different C/Si ratios. The results showed that the optimum C/Si Moore ratio for high oriented and high crystal quality 3C-SiC films was 1.6. The mirro-like high-crystallinity 3C-SiC films on the Si (100) are grown with a 1.6 C/Si ratio at 1385 °C for 1hr. XRD results showed that the diffraction intensity of 3C-SiC (200) peak was very closed to that of Si (400) peak and the FWHM value of it was about 0.19°. The surface roughness was 3.6 nm.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 96%

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Mao

Wang

et al. 2017

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“…Indeed, the morphology of the thin films reflects the morphology of the substrate, such as the number of defects of the grown film is related to the number of defects of the substrate surface itself . Generally, samples obtained by codeposition (showing pits of pyramidal shape at the SiC/Si interface and holes on the surface ,− ,− ) are grown by using high growth flux rate and poor base pressure (≈1 × 10 –7 –1 × 10 –8 mbar) conditions in which it is extremely hard to obtain well-ordered, flat, and defect-free clean Si substrates. , …”

Section: Introductionmentioning

confidence: 99%

Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Pedio

Magnano

Moras

et al. 2022

Crystal Growth & Design

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We report a systematic spectroscopic and structural investigation of 3C-silicon carbide (3C-SiC) films grown on Si(100)-(2 × 1) by codeposition of C 60 molecules and Si atoms in ultrahigh-vacuum conditions. This work focuses on reducing the macroscopic defects formed at the interface in Si-SiC heterojunctions. A wide range of parameters influence the growth process, including the substrate deposition temperature, the relative effusion fluxes of C 60 and Si, and the clean Si(100) surface order. By adjusting the Si and C 60 deposition rates, it is possible to reduce the Si atom diffusion from the substrate and control both the surface morphology and the specific formation of the Crich c(2 × 2) or Si-rich 3 × 2 ordered surfaces. Our results show that the growth of 3C-SiC on flat and good quality Si substrates is a crucial and necessary starting point to obtaining good quality 3C-SiC/Si interfaces with a minimum number of defects.

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Cubic Silicon Carbide: Growth, Properties, and Electrochemical Applications

Yang

Jiang

2019

Novel Carbon Materials and Composites

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Effect of C/Si ratio on the characteristics of 3C-SiC films deposited on Si(100) base on the four-step non-cooling process

Cited by 9 publications

References 14 publications

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Effect of C/Si Moore Ratio on the Morphology and Crystallinity of 3C-SiC/Si(100) by the Modified Two-Step Carbonization Process

Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Cubic Silicon Carbide: Growth, Properties, and Electrochemical Applications

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