Tuning 3C-SiC(100)/Si(100) Heterostructure Interface Quality

Abstract

We report a systematic spectroscopic and structural investigation of 3C-silicon carbide (3C-SiC) films grown on Si(100)-(2 × 1) by codeposition of C 60 molecules and Si atoms in ultrahigh-vacuum conditions. This work focuses on reducing the macroscopic defects formed at the interface in Si-SiC heterojunctions. A wide range of parameters influence the growth process, including the substrate deposition temperature, the relative effusion fluxes of C 60 and Si, and the clean Si(100) surface order. By adjusting the Si and C 60 deposition rates, it is possible to reduce the Si atom diffusion from the substrate and control both the surface morphology and the specific formation of the Crich c(2 × 2) or Si-rich 3 × 2 ordered surfaces. Our results show that the growth of 3C-SiC on flat and good quality Si substrates is a crucial and necessary starting point to obtaining good quality 3C-SiC/Si interfaces with a minimum number of defects.

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