Effect of Bias Condition and Input Harmonic Termination on High Efficiency Inverse Class-F Amplifiers

Goto, S.; Kunii, T.; Ohta, Akira; Inoue, Akihisa; Hosokawa, Yoshihiro; Hattori, Reiji; Mitsui, Y.

doi:10.1109/euma.2001.339197

Cited by 29 publications

(14 citation statements)

References 8 publications

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“…Type Device Input Harmonics Approach [10] class-F, class-F −1 GaN f o , 2f o harmonic tuning [11] class-F, class-B PHEMT f o , 2f o device level [12] class-F, class-F −1 AlGaAs/GaAsN f o , 2f o phase relationship [13] class-FG, class-E GaAs MESFET f o , 2f o power balance [14] class-F Power MESFET f o , 2f o load/source pull [15] class This paper extends the investigation of input harmonic impedance to include the effect of third harmonic terminations on the power efficiency of a class-F amplifier. A systematic comparison of the power efficiency for a design with fundamental, second harmonic, and third harmonic terminations is made.…”

Section: Refmentioning

confidence: 99%

“…The design uses a 10 W GaN power device from Cree and includes fundamental, second and third harmonic matching networks in both the input and output circuits. The experimental work is new and includes a third harmonic input impedance which has not be reported in other experiment results [10][11][12][13][14][15][16].…”

Section: Refmentioning

confidence: 99%

“…The relationship between power efficiency and input harmonic impedances for class-F amplifiers has been studied by others [10][11][12][13][14][15][16] and a summary is presented in Table 1. Most work listed in the table has focused on evaluating the effect of fundamental and second harmonic impedance terminations at the input of the device.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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Abstract-In this paper, the design of a class-F radio frequency power amplifier with a multiharmonic input transmission line network is presented. Harmonic signal components at the gate come from several sources including nonlinear device capacitances and imperfect output harmonic terminations that create harmonic components that are fed back to the gate through the gate-drain capacitance. The effect of these harmonic generation mechanisms and the potential to shape the gate waveform to improve power efficiency are investigated. The study shows that a second harmonic short is most beneficial and the effect of a third harmonic termination is less significant. The concepts are applied to the design of a 10 W GaN class-F amplifier and the design is supported by theoretical, simulation and experimental results. The fabricated design has a measured drain efficiency of 78.8% at an output power of 40.5 dBm for a frequency of 990 MHz. The amplifier was also tested with a 8.8 dB peak-to-average power ratio 5 MHz WCDMA signal. With the modulated signal, the adjacent channel power ratio was −33.1 dBc at a drain efficiency of 46.1% without predistortion correction.

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Section: Refmentioning

confidence: 99%

Section: Refmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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“…It is commonly known that the inverse class-F amplifiers, which have open load at even-order harmonics (voltage peaking) and short load at odd-order harmonics (current peaking), can deliver higher efficiency than class-F operation. Some papers with partial analyses, simulations, or experiments, which demonstrated advantages of the inverse class-F amplifier, have been reported [4]- [6]. However, there have been no reports treating fully analytic and experimental comparisons for the clear explanation of the better efficiency of the inverse class-F amplifier.…”

Section: Introductionmentioning

confidence: 99%

Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers

Woo

Yang

Kim

2006

IEEE Trans. Microwave Theory Techn.

206

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Abstract-This paper presents analytic and experimental comparisons for high-efficiency class-F and inverse class-F amplifiers. The analytic formula of the efficiencies, output powers, dc power dissipations, and fundamental load impedances of both amplifiers are derived from the ideal current and voltage waveforms. Based on the formula, the performances are compared with a reasonable condition: fundamental output power levels of class-F and inverse class-F amplifiers are conditioned to be identical. The results show that the inverse class-F amplifier has better efficiency than that of class-F amplifiers as the on-resistance of the transistor increases.For experimental comparison, we have designed and implemented the class-F and inverse class-F amplifiers at 1-GHz band using a GaAs MESFET and analyzed the measured performances. Experimental results shows 10% higher power-added efficiency of the inverse class-F amplifier than that of the class-F amplifier, which verifies the waveform analysis.

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“…For example, in the fourth-generation mobile communication technology, radio frequency power amplifiers used in base stations are expected to have high performances such as high efficiency and high output power. In order to improve the energy efficiency and signal coverage area of communication systems, efficiency and output power of power amplifier have been a hot topic since 2000 years [2][3][4]. At the same time, so as to cover more carriers' operating frequency bands, power amplifiers are required to have good performances of broadband.…”

Section: Introductionmentioning

confidence: 99%

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

Cheng

Xuan

et al. 2017

Active and Passive Electronic Components

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The design, implementation, and measurements of a high efficiency and high power wideband GaN HEMT power amplifier are presented. Package parasitic effect is reduced significantly by a novel compensation circuit design to improve the accuracy of impedance matching. An improved structure is proposed based on the traditional Class-F structure with all even harmonics and the third harmonic effectively controlled, respectively. Also the stepped-impedance matching method is applied to the third harmonic control network, which has a positive effect on the expansion bandwidth. CGH40025F power transistor is utilized to build the power amplifier working at 0.8 to 2.7 GHz, with the measured saturated output power 20-50 W, drain efficiency 52%-76%, and gain level above 10 dB. The second and the third harmonic suppression levels are maintained at −16 to −36 dBc and −16 to −33 dBc, respectively. The simulation and the measurement results of the proposed power amplifier show good consistency.

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Effect of Bias Condition and Input Harmonic Termination on High Efficiency Inverse Class-F Amplifiers

Cited by 29 publications

References 8 publications

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers

Design of 0.8–2.7 GHz High Power Class-F Harmonic-Tuned Power Amplifier with Parasitic Compensation Circuit

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