Effect of BiAlO3 modification on the stability of antiferroelectric phase in PbZrO3 ceramics prepared by conventional solid state reaction

Effects of BiMO3 on dielectric, ferroelectric, and piezoelectric properties of perovskite lead‐free piezoelectric BaTiO3–(Bi0.5Na0.5)TiO3 ceramics

“…This reason, together with an unstable BaAlO 3 perovskite, leads to the possible destruction of perovskite structure in ceramics with higher Al 3+ content. This is consistent with BNKT25‐xBA, where the solubility limit was identified at x =0.05‐0.075 and Bi 2 Al 4 O 9 found as a second phase, with decreased structural stability of the PZ perovskite phase being present . Figure A shows the X‐ray diffraction patterns of the ceramics, 0.9BaTiO 3 –(0.1− x )(Bi 0.5 Na 0.5 )TiO 3 – x Bi Ga O 3 , where x =0.00, 0.02, 0.04, 0.06, 0.08, and 0.10, and Figure B shows enlarged reflections for (111), (200), (211), and (220) planes.…”

“…There was no significant change of T m values. This correlates with a PZ‐based solid solution, where increasing BA results in a small decrease of transition temperature . The shape of the dielectric constant curves deviated from sharp peaks to broad peaks.…”

“…Hence, in order to (partially) stabilize the perovskite phase in BiAlO 3 and BiGaO 3 , solid solutions were performed with other stable perovskite materials. However, Bi M O 3 compounds were found to enhance the transition temperature with larger piezoelectric effect when performing solid solution with PbTiO 3 , and stabilizing the antiferroelectric phase of PbZrO 3 . Thus, in order to modify the properties of BT‐based ceramics, this research built a solid solution of BT‐BNT ceramic, with a BNT ratio of 0.1, to avoid high E c .…”

Effects of raw materials on microstructure and dielectric properties of PbZrO3 antiferroelectric thin films prepared via sol–gel process

“…During the electric field-induced phase switching procedure between AFE and ferroelectric, AFEs usually display larger field-induced strains, higher energy storage density, considerable pyroelectric coefficient, and giant electrocaloric effect, which make them potential for applications in micro-actuators, infrared-detectors, digital memories, high energy storage capacitors and cooling devices [3][4][5]. Therefore, lead-based AFE materials in bulk ceramic and film forms are attracting increasing attention [6][7][8][9][10][11]. However, in contrast to PZO films, the room temperature field-induced AFE-FE switching in PZO bulk ceramic has not been realized because of its lower breakdown field.…”

Structure and electrical properties of (1−x) (Bi0.5 (Na0.82K0.18)0.5) TiO3–x BiAlO3 lead-free piezoelectric ceramics

“…However, its poor thermal stability and the extreme conditions used to synthesize this material limit its usability in technological applications [14,15]. Therefore, it is favorable to stabilize BA by incorporating it into other perovskite materials to form solid solutions [16][17][18][19].…”