Abstract:New lead‐free piezoelectric ceramics of 0.9BaTiO3–(0.1−x)(Bi0.5Na0.5)TiO3–xBiMO3, M=Al and Ga, where x=0.00‐0.10, were fabricated by the solid‐state reaction technique. The effect of BiMO3 contents on the perovskite structure, phase transition, and dielectric, ferroelectric, and piezoelectric properties was investigated. X‐ray diffraction patterns showed that the ceramics exhibit a monophasic perovskite phase up to x=0.06, suggesting stabilized perovskite structures with B‐site aliovalent substitutions. Compos… Show more
“…x T m (°C) ε r(max) ε r(RT) ε r(mid)250°C T À range (°C) for ε r � 15% (1 kHz) tanδ (RT) T À range (°C) for tanδ < 0.05 (1 kHz) P max (μC/cm 2 ) J rec (J/cm 3 ) 0 [12] lattice order due to occupancy of multiple cation at A-site (Ba 2 + , Bi 3 + , Na + ) and B-site (Ti 4 + , Mg 2 + , Nb 5 + ). [31] Therefore, by increasing the level of doping may further promote the short range ferroelectric order as previously reported for BaTiO 3 À NaNbO 3 , causing a decrease in ε r . [32] The maximum relative permittivity is found for the composition at x = 0.10 i. e. ε r = 495 and low dielectric loss at room temperature i. e. less than 0.003 at 1 kHz.…”
Section: Resultsmentioning
confidence: 64%
“…On the other hand, the incorporation of NN in BMN also change the charge disorder due to the different oxidation state of Na + than other A‐site cations. This may cause an increase in the degree of lattice order due to occupancy of multiple cation at A–site (Ba 2+ , Bi 3+ , Na + ) and B‐site (Ti 4+ , Mg 2+ , Nb 5+ ) . Therefore, by increasing the level of doping may further promote the short range ferroelectric order as previously reported for BaTiO 3 −NaNbO 3 , causing a decrease in ϵ r .…”
0.5BaTiO3–(0.5–x)Bi(Mg2/3Nb1/3)O3–xNaNbO3 (x=0.1, 0.2 and 0.3) samples were processed via solid‐state sintering route. Phase identification of the samples showed the formation of a single‐phase cubic perovskite‐structure (space group Pm‐3 m) which was further confirmed using Raman spectroscopy. Microstructural analysis of the samples revealed some voids in the samples while grain size was observed to decrease with increasing NaNbO3 concentration. The addition of NaNbO3 shifted Tm to below room temperature and the stability range of 0.5BaTiO3–0.5Bi(Mg2/3Nb1/3)O3 ceramics was enhanced. The sample with x=0.20 exhibited ϵr(mid) = 400 ±15% stable over a wide temperature range from −85 to 500 °C and most importantly a low dielectric loss of < 0.05 stable across a wide temperature range −100 to 426 °C was maintained. The thermally stable dielectric properties of sample x=0.2 suggests that it could be useful candidate material for capacitor applications in both low (X9R) as well as harsh environment applications.
“…x T m (°C) ε r(max) ε r(RT) ε r(mid)250°C T À range (°C) for ε r � 15% (1 kHz) tanδ (RT) T À range (°C) for tanδ < 0.05 (1 kHz) P max (μC/cm 2 ) J rec (J/cm 3 ) 0 [12] lattice order due to occupancy of multiple cation at A-site (Ba 2 + , Bi 3 + , Na + ) and B-site (Ti 4 + , Mg 2 + , Nb 5 + ). [31] Therefore, by increasing the level of doping may further promote the short range ferroelectric order as previously reported for BaTiO 3 À NaNbO 3 , causing a decrease in ε r . [32] The maximum relative permittivity is found for the composition at x = 0.10 i. e. ε r = 495 and low dielectric loss at room temperature i. e. less than 0.003 at 1 kHz.…”
Section: Resultsmentioning
confidence: 64%
“…On the other hand, the incorporation of NN in BMN also change the charge disorder due to the different oxidation state of Na + than other A‐site cations. This may cause an increase in the degree of lattice order due to occupancy of multiple cation at A–site (Ba 2+ , Bi 3+ , Na + ) and B‐site (Ti 4+ , Mg 2+ , Nb 5+ ) . Therefore, by increasing the level of doping may further promote the short range ferroelectric order as previously reported for BaTiO 3 −NaNbO 3 , causing a decrease in ϵ r .…”
0.5BaTiO3–(0.5–x)Bi(Mg2/3Nb1/3)O3–xNaNbO3 (x=0.1, 0.2 and 0.3) samples were processed via solid‐state sintering route. Phase identification of the samples showed the formation of a single‐phase cubic perovskite‐structure (space group Pm‐3 m) which was further confirmed using Raman spectroscopy. Microstructural analysis of the samples revealed some voids in the samples while grain size was observed to decrease with increasing NaNbO3 concentration. The addition of NaNbO3 shifted Tm to below room temperature and the stability range of 0.5BaTiO3–0.5Bi(Mg2/3Nb1/3)O3 ceramics was enhanced. The sample with x=0.20 exhibited ϵr(mid) = 400 ±15% stable over a wide temperature range from −85 to 500 °C and most importantly a low dielectric loss of < 0.05 stable across a wide temperature range −100 to 426 °C was maintained. The thermally stable dielectric properties of sample x=0.2 suggests that it could be useful candidate material for capacitor applications in both low (X9R) as well as harsh environment applications.
“…However, ABO 3 -type perovskite ferroelectric materials have a large electronegativity difference between the B-site cation and the O-ion, resulting a wide bandgap (≥3.0 eV) in most ferroelectrics. [11][12][13] This condition makes the absorption of sunlight by ferroelectrics stay in the UV region, although BiFeO 3 , 14,15 which has a known bandgap of as low as 2.7 eV, can only absorb ∼20% of the solar spectrum. The absorption of sunlight by ferroelectrics needs to be improved to enhance its photoelectric conversion efficiency and photovoltaic output.…”
Section: Introductionmentioning
confidence: 99%
“…Ferroelectric photovoltaic materials with both bulk photovoltaic effect 9 and electrostatic potential at the nano‐domain wall, 10 which can generate photovoltaic voltages above the bandgap, can further improve the photovoltaic conversion efficiency and are potential candidates for next‐generation photovoltaic devices. However, ABO 3 ‐type perovskite ferroelectric materials have a large electronegativity difference between the B‐site cation and the O‐ion, resulting a wide bandgap (≥3.0 eV) in most ferroelectrics 11–13 . This condition makes the absorption of sunlight by ferroelectrics stay in the UV region, although BiFeO 3 , 14,15 which has a known bandgap of as low as 2.7 eV, can only absorb ∼20% of the solar spectrum.…”
A bandgap-tunable KNbO 3 ferroelectric ceramic was prepared by introducing Bi/Co ion. The existence of mixed valence states of Co 2+ /Co 3+ in the system induced the bandgap reduction and its tunable behavior. KNbO 3 -BiCoO 3 solid solutions showed a typical orthogonal perovskite structure and maintained good ferroelectricity (P s = 15.13 µC/cm 2 ) and high-field polarization ability. The devices based on the .98KNbO 3 -.02BiCoO 3 sample exhibited an improved shortcircuit photocurrent density (J sc ) of 19.2 nA/cm 2 under simulated solar radiation, and this was further enhanced to 79.8 nA/cm 2 after a 60-kV/cm polarizing. The structural analysis of the samples after polarization reveals the effect of ferroelectric polarization on photovoltaic performance. This work provides new insights into the effects of ferroelectric polarization on photovoltaic performance.
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