Effect of band gap energy on the electrical conductivity in doped ZnO thin film

Benramache, Said; Belahssen, Okba; Temam, Hachemi Ben

doi:10.1088/1674-4926/35/7/073001

Cited by 17 publications

(10 citation statements)

References 35 publications

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“…Such an increase of the band gap normally results in the decrease of conductivity of the MoO 3 layer. 52 To determine if the changes in WF and the electronic properties were due to O 2 or moisture in the air, three conditions were examined: normal laboratory atmosphere (21 °C, 42% humidity), dry N 2 (99.99%), and dry air (H 2 O < 25 ppm) individually for 40 min each. The secondary electron cutoff in the respective UPS spectra is shown in Figure S3.…”

Section: Resultsmentioning

confidence: 99%

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Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces

Yin

Lewis

Andersson

2018

ACS Appl. Mater. Interfaces

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MoO 3 is widely used in polymer-based organic solar cells as an anode buffer layer because of its high workfunction and formation of a strong dipole at the MoO 3 /polymer interface facilitating charge transfer across the MoO 3 /polymer interface. In the present work, we show that exposure of the MoO 3 /polymer interface to moisture attracts water molecules to the interface via diffusion. Because of their own strong dipole, water molecules counter the dipole at the MoO 3 /polymer interface. As a consequence, the charge transfer across the MoO 3 /polymer will reduce and affect the charge transport across the interface. The outcome of this work thus suggests that it is critical to keep the MoO 3 /polymer interface moisture-free, which requires special precautions in device fabrications. The composition of the MoO 3 /P3HT:PC 61 BM interface is analyzed with X-ray photoelectron spectroscopy and the depth profiling technique, neutral impact collision ion scattering spectroscopy. The results show that the concentration of oxygen increases upon exposure but leaves the oxidation state of Mo unchanged. The valence electron spectroscopy technique shows that the dipole across the MoO 3 /P3HT:PC 61 BM interface decreases even for short-time exposure to atmosphere because of the diffusion of water molecules to the interface. The far-ranging consequences for organic electronic devices are discussed.

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Section: Resultsmentioning

confidence: 99%

“…E VB gradually increases as well as E CB , which leads to an increase of the band gap. Such an increase of the band gap normally results in the decrease of conductivity of the MoO 3 layer …”

Section: Resultsmentioning

confidence: 99%

Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces

Yin

Lewis

Andersson

2018

ACS Appl. Mater. Interfaces

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“…Nickel oxide (NiO) is the most investigated metal oxide and it has attracted considerable attention because of its low cost material, and also for its applications in several fields such as a catalyst, transparent conducting oxide, photodetectors, electrochromic, gas sensors, photovoltaic devices, electrochemical supercapacitors, heat reflectors, photo-electrochemical cell, solar cells and many opto-electronic devices [1][2][3][4][5][6][7][8][9][10][11]. NiO is an IV group and it can be used as a transparent p-type semi-conductor layers, it has a band gap energy ranging from 3.45 eV to 3.85 eV [12].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film

Ghougali¹,

Belahssen²,

Chala³

2017

J. Nano- Electron. Phys.

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Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the average of the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found 46.62 for as-deposited sample and 119.89 nm for the annealed one. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging ranging 3.64 for as-deposited sample and 2.98 eV for the annealed one. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.09241 (•cm) −1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.

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“…Different kind of doping have been applied to ZnO, aiming at improving conducting properties but preserving its transparency. 8,9,13,14 Successful results have been reported in the attempt to dope ZnO with fluorine (F),since an additional electron with respect to oxygen is naively considered a "shallow donor". 2,8,9,15 Nevertheless, the mechanism through which F atoms can provide free carriers is still controversial.…”

Section: ■ Introductionmentioning

confidence: 99%

Morphological, Structural, and Charge Transfer Properties of F-Doped ZnO: A Spectroscopic Investigation

Papari¹,

Silvestri

Vitiello

et al. 2017

J. Phys. Chem. C

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Different spectroscopic techniques have been applied to fluorine doped ZnO powders prepared through hydrothermal synthesis, to discern the effective capability of F atoms to improve ZnO conductivity. From XRD analysis, no lattice distortion was observed up to F doping at 5 at. % concentration. Photoluminescence measurements and electron paramagnetic resonance data show that F atoms tend to occupy oxygen vacancies, inducing the onset of luminescence centers. The resulting doping effect consists into the increment of localized charge, as also proved via THz spectroscopy, where the Drude–Smith model has been applied to extract quantitative information on the electrodynamic parameters of ZnO:F samples. Results show that F doping does not produce any substantial change of plasma frequency but only the enhancement of scattering rate due to an increase of grain boundary density. Our measurements are in agreement with theoretical calculations asserting that the energy required to excite donor levels is on the order of 0.7 eV, and therefore, the doping mechanism is ineffective at room temperature.

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Effect of band gap energy on the electrical conductivity in doped ZnO thin film

Cited by 17 publications

References 35 publications

Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces

Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces

Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film

Morphological, Structural, and Charge Transfer Properties of F-Doped ZnO: A Spectroscopic Investigation

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Effect of band gap energy on the electrical conductivity in doped ZnO thin film

Cited by 17 publications

References 35 publications

Influence of Moisture on the Energy-Level Alignment at the MoO3/Organic Interfaces

Influence of Moisture on the Energy-Level Alignment at the MoO3/Organic Interfaces

Effect of Annealing in Physical Properties of NiO Nanostructure Thin Film

Morphological, Structural, and Charge Transfer Properties of F-Doped ZnO: A Spectroscopic Investigation

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Product

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Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces

Influence of Moisture on the Energy-Level Alignment at the MoO₃/Organic Interfaces