Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found in the range between 9 and 47 nm. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging between 3.64 and 3.86 eV. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.0896 (Ω cm) -1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.

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In the present paper, we investigated a new model by theoretical methods; it is based on correlation from the experimental data's which was used in the calculation the optical gap energy and Urbach energies. These data's were taken from papers previously published. The choice ZnO thin films and spray only to compare our models with the Indium doping. From obtained relations found that the experimental data and theoretical calculation are in qualitative, which were supported with the variation of solution molarities and Indium doping. We have obtained a high correlation coefficient in the estimation of the band gap energy is higher than 0.96 with compare of Urbach energy is changed from 0.84 to 0.89. The measurements by these new models have agreed with minimum relative errors, it is found in the calculations of optical band gap does not exceed 4 %, and for Urbach energy are smaller than 20 and 10 % for undoped and Indium doped ZnO films, respectively. So that the best estimation was found at the Indium doped ZnO thin with maximum enhancement of minimum errors were limited to 3.5 and 9.7 % for the band gap and the Urbach energies, respectively. The decreases in the relative errors of undoped to Indium doped films can be explained by the fewer defects and less disorder.

Nickel oxide was deposited on highly cleaned glass substrates using spray pneumatic technique. The effect of precursor molarity on structural, optical and electrical properties has been studied. The XRD lines of the deposited NiO were enhanced with increasing precursor molarity due to the improvement of the films crystallinity. It was shown that the average of the crystalline size of the deposited thin films was calculated using Debye-Scherer formula and found 46.62 for as-deposited sample and 119.89 nm for the annealed one. The optical properties have been discussed in this work. The absorbance (A), the transmittance (T) and the reflectance (R) were measured and calculated. Band gap energy is considered one of the most important optical parameter, therefore measured and found ranging ranging 3.64 for as-deposited sample and 2.98 eV for the annealed one. The NiO thin film reduces the light reflection for visible range light. The increase of the electrical conductivity to maximum value of 0.09241 (•cm) −1 can be explained by the increase in carrier concentration of the films. A good electrical conductivity of the NiO thin film is obtained due to the electrically low sheet resistance. NiO can be applied in different electronic and optoelectronic applications due to its high band gap, high transparency and good electrical conductivity.