EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs

Muñoz, E.; Snyder, W. L.; Moll, J.L.

doi:10.1063/1.1653188

Cited by 87 publications

(12 citation statements)

References 9 publications

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“…The other two samples (VEF-10-11, VEF-8-4) were heat-treated with Ga source and after several epitaxial growths. The carrier density of the former sample was clearly decreased at the surface as reported by M~noz et al (13). But the change in the carrier density was found within only about 1.0 ~m from the surface.…”

Section: Change Of Surface Carrier Density By Heat Treatmentsupporting

confidence: 78%

“…Since the drastic change of the surface carrier density occurred in the atmosphere of GaC1/As4/H2 (precisely speaking, GaC1, GaC13, HC1, As4, and H2) and under a slight gas etching, it is reasonable to think that Ga was removed from the GaAs surface in a fairly high arsenic partial pressure and some defect, for example, such as Ga vacancy, was formed at the surface. M~noz et al (13) also reported that, when a sufficient arsenic pressure was applied during the heattreatment, surface carrier density was decreased due to formation of Ga vacancy.…”

Section: Change Of Surface Carrier Density By Heat Treatmentmentioning

confidence: 99%

“…13, if the profile of the diffused impurities was assumed to be a complementary error function. M~"noz et aL (13) estimated the diffusion constant of the acceptors induced at the surface by a heat-treatment to be about 10 -12 cm2/sec for PAs (arsenic pressure) _>_ 50 Torr and about 10 -l~ cm2/sec for PAs < 50 Torr. These values are considered to be comparable to ours if one considers the relatively low accuracy of the measurements and the derivation.…”

Section: Change Of Surface Carrier Density By Heat Treatmentmentioning

confidence: 99%

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Origin of the High Resistance Region at the Epitaxial GaAs Layer-Substrate Interface

Hasegawa

1972

J. Electrochem. Soc.

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In order to find the reason for the high resistance region which appears at the interface between a vapor-grown epitaxial GaAs layer and the substrate, epitaxial layers were grown by changing the substrate temperature or arsenic pressure in the reaction system. Heat-treatment of substrates was also examined under a hydrogen atmosphere or in a flow of GaC1/As4/H2. A high resistance layer occurred even when the growth was initiated after the reaction had reached a steady state. While mere heat-treatment in hydrogen changed the surface carrier density only slightly, the heat treatment in the flow of GaC1/ As4/H2 changed the region within a few microns from the surface of undoped substrates to almost semi-insulating. The experimental results seem to indicate that the high resistance region is formed on GaAs surface or at the interface if the gas etching slightly overcomes the growth in a reaction system. Results of photoresponse and photoluminescence measurements on the high resistance region are also presented.

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Section: Change Of Surface Carrier Density By Heat Treatmentsupporting

confidence: 78%

Section: Change Of Surface Carrier Density By Heat Treatmentmentioning

confidence: 99%

Section: Change Of Surface Carrier Density By Heat Treatmentmentioning

confidence: 99%

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Origin of the High Resistance Region at the Epitaxial GaAs Layer-Substrate Interface

Hasegawa

1972

J. Electrochem. Soc.

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“…Arsine transported to the reaction tube is assumed to be fully decomposed at 900~ Then, the relation between PAsHa and PAs2 can be written in the form of PAsHs/PAs2 = K2 = 2 [6] as a result of the complete reaction of Eq. [2], where PAsH3 is partial pressure of arsine in the incoming gas flow. Equation [6] does not mean equilibrium relation, therefore K2 is not an equilibrium constant.…”

Section: Resultsmentioning

confidence: 99%

“…Many authors have reported on annealing of GaAs in an arsenic pressure (1)(2)(3). For example, Chiang and Pearson (1) annealed GaAs and described the excess carriers in the vicinity of the surface as being the result of arsenic vacancies as donors.…”

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confidence: 99%

Effect of Arsenic Partial Pressure on Capless Anneal of Ion‐Implanted GaAs

Kasahara

Arai

Watanabe

1979

J. Electrochem. Soc.

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A capless anneal of ion-implanted GaAs was performed under different partial pressure of arsenic controlled by decomposition of arsine. Sheet carrier concentration of GaAs implanted with Mg or Si increased with increasing arsenic partial pressure, while that of S + implanted showed an opposite trend which corresponded to the different lattice sites occupied in the crystal. The site-occupation rate and ionization rate of implanted impurity atoms were thermodynamically determined by analyzing the variation of the sheet carrier concentration with the partial pressure of arsine. The site-occupation rate was found to be larger than 90% for the case of Mg or S implantation. The ionization rate of the substitutional atoms limited the doping efficiency of implanted impurities in these cases, while both the site-occupation rate and the ionization rate were responsible for the doping efficiency of Si implantation.

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