Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

Jones, K. S.; Jasper, C.; Hoover, Allen

doi:10.1063/1.1355006

Cited by 4 publications

(1 citation statement)

References 20 publications

(10 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar observations were reported regarding the megaelectronvolts boron ion implantation induced dislocation, studied using TEM and etch pit density counts by Schimmel etching. 20,23,24 The Schimmel etching has a much faster etching rate of 1.5 m/min, as compared to the etching recipe used in this study ͑0.6 m/min͒. The etching depth can be more easily controlled using the slow etching rate recipe.…”

Section: Resultsmentioning

confidence: 96%

Implantation Induced Defects in the Retrograde Well with a Buried Layer

Hsu

Liang

Chen

2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

This work investigates the implantation induced extended defects in the retrograde p-and n-well with/without a buried layer after postimplantation thermal annealing at 950°C in N 2 ambient. A preferential etchant of CrO 3 /HF mixed solution was used to delineate the defects induced by high-energy ion implantation. It is found that the extended defects elongated to the top surface of the retrograde well with a buried layer, which was implanted with high-energy boron ion at 1500 keV to a dose of 3 ϫ 10 13 cm Ϫ2 , resulting in the etching pits of extended defects at a density of about 10 5 cm Ϫ2 .

show abstract

Section: Resultsmentioning

confidence: 96%

Implantation Induced Defects in the Retrograde Well with a Buried Layer

Hsu

Liang

Chen

2002

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

Spatially resolved thermoreflectance study of facet temperature in quantum cascade lasers

Wawer

Ochalski

Piwoński

et al. 2005

Physica Status Solidi (a)

View full text Add to dashboard Cite

In the present work, we use spatially resolved thermoreflectance (SR TR) to measure temperature distribution over the facet of pulsed operated quantum cascade lasers. The laser beam probes the change in the refractive index caused by current-induced heating of working device. The technique has a spatial resolution of about ~1 µm and temperature resolution better than 1 K. It gives an insight into distribution and relative importance of heat sources within the laser.

show abstract

Influence of Operating Conditions on Quantum Cascade Laser Temperature

Pierściński

Pierścińska

Kosiel

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

In this work, the influence of operating conditions on the temperature of a quantum cascade laser (QCL) was studied experimentally by means of thermoreflectance, a nondestructive optical modulation technique providing information on the temperature of the laser facet. The heat load in the devices was changed by changing the duty cycle at constant pulse repetition rate. The measured temperature increases under pulsed operation, allowing the thermal resistance to be determined.

show abstract

Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si

Abstract: The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon

Cited by 4 publications

References 20 publications

Implantation Induced Defects in the Retrograde Well with a Buried Layer

Implantation Induced Defects in the Retrograde Well with a Buried Layer

Spatially resolved thermoreflectance study of facet temperature in quantum cascade lasers

Influence of Operating Conditions on Quantum Cascade Laser Temperature

Contact Info

Product

Resources

About