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In the present work, we use spatially resolved thermoreflectance (SR TR) to measure temperature distribution over the facet of pulsed operated quantum cascade lasers. The laser beam probes the change in the refractive index caused by current-induced heating of working device. The technique has a spatial resolution of about ~1 µm and temperature resolution better than 1 K. It gives an insight into distribution and relative importance of heat sources within the laser.

We report on the fabrication of p-ZnO films by thermal oxidation of Zn 3 N 2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ~5x10 17 cm -3 and the mobility of 23.6 cm 2 /Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

International audienceThis article investigates the nitridation effect of InP(100) semiconductor surfaces performed by a glow discharge cell (GDS). Electron spectroscopies (AES, ESCA) were used to understand the different steps of this process. An important point is the initial quantity of metallic indium on the InP(100) surfaces. Indeed the indium droplets, created in well known quantity, play the role of precursor. At a relatively low temperature T = 523 K, the system undergoes surface restructuration which includes removal of the In droplets and the elaboration of two InN monolayers. P-N bonds and InN bonds have been detected by the analysis of PLMM and InMNN Auger peaks and In4d ESCA peak. However, the presence or not of metallic indium inside this InN overlayer is crucial for the passivation of the substrate. Ex-situ photoluminescence measurements correlated to the electron spectroscopies results have put i

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