Thermoreflectance study of facet heating in semiconductor lasers

Bugajski, M.; Piwoński, Tomasz; Wawer, D.; Ochalski, Tomasz J.; Deichsel, E.; Unger, Peter; Corbett, Brian

doi:10.1016/j.mssp.2006.01.072

Cited by 31 publications

(20 citation statements)

References 13 publications

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“…After the onset of the thermal runaway, a ΔT -increase of 330 K within less than 2 s is found. The high speed of the reflectance modulation technique allowed to take temperature maps at facets [28,71,117,119,120,[123][124][125][126][127][128]. Furthermore, it became possible to monitor even fairly extended devices such as high power diode laser bars, often called 'cm-bars' (because of the total array width of one cm) [126][127][128].…”

Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…The investigations have been inspired by temperature maps obtained by thermoreflectance method (Bugajski et al (2006); Wawer et al (2005)) for p-down mounted devices. These maps suggest the presence of the region of constant temperature in the vicinity of the n-contact.…”

Section: Discussion Of the Upper Boundary Conditionmentioning

confidence: 99%

Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Szymański¹

2011

Heat Transfer - Engineering Applications

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“…The thermoreflectance coefficients obtained by this procedure are C TR-Het = 8.63 × 10 3 K (average value for epitaxial layers) and C TR-GaAs = 3.45 × 10 3 K (GaAs substrate). The calibration, serving as well as confirmation of the correctness of TR results, can also be done by micro-Raman measurements [12,102] and micro-photoluminescence (PL) [104].…”

Section: Temperature Calibration Techniquesmentioning

confidence: 99%

“…Two types of InGaAs/GaAs lasers emitting at λ = 980 nm were investigated: mounted epi-layers down on SiC heatspreader and copper HS, as well as epi-layers up. The series of temperature distribution maps for increasing value of driving current for laser mounted epi-down onto SiC is shown in figure 8(b) together with SEM photograph and scheme of epitaxial layers ( figure 8(a)) [105].…”

Section: Analysis Of Different Mounting Arrangements and Assessment Omentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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Thermoreflectance study of facet heating in semiconductor lasers

Cited by 31 publications

References 13 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mathematical Models of Heat Flow in Edge-Emitting Semiconductor Lasers

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

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