p-type in ZnO:N by codoping with Cr

Abstract

We report on the fabrication of p-ZnO films by thermal oxidation of Zn 3 N 2 deposited by reactive rf sputtering. With additional chromium doping we achieved p-type conductivity with the hole concentration ~5x10 17 cm -3 and the mobility of 23.6 cm 2 /Vs at room temperature. We developed a method of surface passivation of p-ZnO that maintains its p-type conductivity over time-scale of months.

p‐type conducting ZnO: fabrication and characterisation

“…6b). At ~1x10 20 at.cm -3 of hydrogen, p-type ZnO:N with hole concentration of 8x10 13 cm -3 and mobility of 111 cm low hydrogen level, we estimate the nitrogen ionization energy to be ~170 meV. This value, in agreement with those reported by Zeuner et al [17], needs to be confirmed by temperature-dependent transport measurements.…”

“…At lower temperatures, the process was very slow, while at ~700 °C interaction with the substrate components immediately occurred [13]. Since the microstructure of Zn 3 N 2 films depends on the availability of nitrogen during the process of deposition, we studied its impact on the properties of ZnO.…”

Preparation and characterization of hexagonal MnTe and ZnO layers

“…Thus, it is difficult for N to be incorporated into ZnO even N is supplied during the growth as activated plasma. We have proposed previously a new method of fabrication of p-type ZnO, which involves oxidation of sputter-deposited Zn 3 N 2 or Zn 3 N 2 δ-doped with Cr [9,10].…”

Transparent p-type ZnO films obtained by oxidation of sputter-deposited Zn3N2

“…In this respect, experiments comparing standard and improved conditions for the deposition of Zn 3 N 2 (initial vacuum level, target pre-treatment) have been performed. Also, encouraged by results of our preliminary studies on hydrogen gettering by Cr [15], investigation of ZnO obtained from Zn 3 N 2 :Cr starting material has been carried out. Fig.…”