Influence of Operating Conditions on Quantum Cascade Laser Temperature

Pierściński, Kamil; Pierścińska, Dorota; Kosiel, Kamil; Szerling, Anna; Bugajski, M.

doi:10.1007/s11664-010-1213-5

Cited by 9 publications

(5 citation statements)

References 22 publications

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“…431 Bugajski et al [125] have used this technique for analyzing different mounting arrangements via an advanced determination of thermal resistances and for the assessment of different etching technologies. The same group also reported facet temperature analysis in quantum cascade devices [123,129]. Hayakawa et al [120][121][122] investigated the impact of device design parameters such as emitter stripe width and waveguide thickness on the facet temperature.…”

Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Reflectance Modulation and Thermoreflectancementioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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show abstract

“…In the next papers [117][118][119] different mounting options and device geometries are compared in terms of their influence on the relative increase of the active region temperature. The numerical thermal model of QC lasers, solving heat transport equation in 2D and 3D, which includes anisotropy of thermal conductivity was developed [120].…”

Section: Quantum Cascade Lasers (Qcl)mentioning

confidence: 99%

“…Thermoreflectance measurements of QCL started in at the Institute of Electron Technology in 2005 and lead to the ability to register temperature distribution over the facet of QCL [116]. In the next papers [117][118][119] different mounting options and device geometries are compared in terms of their influence on the relative increase of the active region temperature. The numerical thermal model of QC lasers, solving heat transport equation in 2D and 3D, which includes anisotropy of thermal conductivity was developed [120].…”

Section: Quantum Cascade Lasers (Qcl)mentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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“…Gao et al (2006Gao et al ( , 2007a investigated influence of electron leakage to X valleys and compared the performance with other structures (Sirtori et al 1998(Sirtori et al , 1999. We would like to notice that this particular structure design has been a basis for fabrication of QCL by Prof. M. Bugajski research group at Institute of Electron Technology, Warsaw, Poland (Kosiel et al 2009(Kosiel et al , 2011, and extensively investigated experimentally (Pierściński et al 2010(Pierściński et al , 2012Bugajski et al 2013Bugajski et al , 2014. In collaboration with this project microscopic description of electron behavior (Borowik et al 2010) and investigation of space-charge effect (Konupek et al 2011;Borowik et al 2012) have been performed by MC technique.…”

Section: Examples Of MC Studies Of Qclmentioning

confidence: 99%

Monte Carlo modeling applied to studies of quantum cascade lasers

2017

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One of the commonly used approaches of solving electron transport problems in quantum cascade lasers (QCL) is the Monte Carlo (MC) method, based on semiclassical description in the framework of the Boltzmann Transport Equation. A major benefit of MC modeling is that it only relies on well-established material parameters and structure specification, in most cases without the need to use phenomenological parameters. The results of the modeling can be easily interpreted and they give microscopic insight of QCL operation. The goal of the present paper is to review the application of the MC technique to the studies of operation of QCL. The description of the components of the simulation algorithm is provided. Various physical mechanisms governing electron transport in QCL are described and their influence on the operation are reviewed.

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Influence of Operating Conditions on Quantum Cascade Laser Temperature

Cited by 9 publications

References 22 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Monte Carlo modeling applied to studies of quantum cascade lasers

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