Implantation Induced Defects in the Retrograde Well with a Buried Layer

Hsu, Wen-Jing; Liang, Mong–Song; Chen, Mao‐Chieh

doi:10.1149/1.1445433

Cited by 1 publication

(2 citation statements)

References 22 publications

(31 reference statements)

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“…The first minimum g could be caused by the ex- tended defects, induced by the shallow boron implantation, which are originally generated at R P /2 and further diffuse during the thermal processing. The second minimum g is maybe due to the deep boron implantation, as reported by Hsu et al 25 who observed by scanning electron microscopy dislocation loops starting around 60% of R P . The second minimum g moves closer to the junction by reducing the p-well implantation energy.…”

Section: Resultsmentioning

confidence: 58%

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Diode Analysis of Advanced Processing Modules for Deep-Submicrometer CMOS Technology Nodes

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Simoen

Claeys

et al. 2003

J. Electrochem. Soc.

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This paper describes the impact of shallow trench isolation depth, different p-well implantation dose and energy, cobalt silicide thickness, and thermal budgets compatible with a 0.18 m, 0.13 m, and 90 nm complementary metal-oxide semiconductor ͑CMOS͒ technology on the junction leakage current. It is demonstrated that for a 90 nm node a shallow trench depth ͑e.g., 250 nm͒ increases the peripheral and corner currents due to a higher surface generation velocity. A higher leakage current and yield loss are obtained for a lower well implantation energy and higher dose. The higher leakage current after silicidation is due to a combination of the shallow junction effect and film roughness. A lower junction leakage current is found for a higher thermal budget because of the better annealing of the p-well implantation-induced defects. This conclusion is derived from a dedicated generation and recombination lifetime and surface generation velocity analysis, which has been developed for shallow junctions in a highly doped p-well and combines current-voltage ͑I-V͒ and capacitance-voltage ͑C-V͒ characteristics.

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Section: Resultsmentioning

confidence: 58%

“…12͒, and the literature. 25 As shown in Fig. 11, both J A and J P increase with a reduction of the energy and a dose increase of the p-well implantation.…”

Section: ͓8͔mentioning

confidence: 80%