Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Ruterana, P.; Morales, Magali; Chery, Nicolas; Ngo, Thi Huong; Chauvat, Marie-Pierre; Lekhal, Kaddour; Damilano, B.; Gil, Bernard

doi:10.1063/5.0027119

Cited by 10 publications

(5 citation statements)

References 34 publications

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“…The bright field overview image of the 5 μm AlN epilayer shows regularly spaced vertical features (Figure 3a), which emanate from the patterned sapphire surface as tubular defects and extend just below the surface, in agreement with the AFM observations (Figure 2e). Between these tubular defects, a-type dislocations 35,36 are visible (Figure 3c). The absence of screwor mixed-type dislocations in the investigated area and the density of the a-type dislocations correlate well with the expectation from XRD results.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Deng

Xie

et al. 2023

ACS Appl. Nano Mater.

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The atomic-layer misorientation during the growth of a 5 μm thick AlN thin film on a patterned (0001) sapphire substrate was investigated by the scan rotation approach using a probe aberration-corrected scanning transmission electron microscope at a nanometer scale. Through the geometrical phase analysis of the resulting twisted atomic structure at different depths below the top surface, it is shown that over 10% of local tensile and compressive strain is balanced in a 1.6° twist of the c-planes within the first micron of AlN growth. As a consequence, the formation of threading dislocations is reduced. The in-plane twist is seen to decrease toward the layer surface down to 0.5°. Finally, growth has adopted the conventional step flow mechanism with a reduced density of emerging dislocations by the thickness of 5 μm. Our finding forecasts the possibility of understanding the relationship between atomic bilayer twist and local strain accommodation at a nanometer scale, which could provide guidance for achieving better crystal quality of AlN thin films on patterned substrates during epitaxy.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Deng

Xie

et al. 2023

ACS Appl. Nano Mater.

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“…The fwhm values for GaN (002) were 1.00°, 1.45°, and 0.83° for GaN films on 10-Ox-, 3-Ox-, and As-AlN layers, respectively. However, this difference in crystallinity could be eliminated by increasing the number of stacked structures and the thickness of the AlN and AlGaN buffer layers, as has been used in MOCVD. , With increasing thickness of the buffer layers, the difference in crystallinity between the two stacked structures disappeared to a large extent (Supporting Information, Figure S1). In addition, changes in grain growth were observed, with AFM showing that samples with better crystallinity exhibited larger grain growth.…”

Section: Resultsmentioning

confidence: 99%

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

et al. 2022

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The ability to control the polarity of an all-sputtered epitaxial GaN/AlN/Al film on a Si(111) substrate via intermediate oxidization was investigated. A stable surface of GaN on a Si substrate is a N-terminated surface (−c surface); hence, for electric device applications, the Ga-terminated surface (+c surface) is preferable. The GaN/AlN/Al film on Si(111) showed a −c surface, as confirmed by time-of-flight low-energy atom scattering spectroscopy (TOFLAS) and X-ray photoelectron spectroscopy (XPS). The AlN layer was intentionally oxidized via air exposure during film growth. The GaN surface subjected to the oxidization process had the +c surface. Secondary-ion mass spectrometry measurements indicated a high oxygen concentration after the intentional oxidization. However, the intentional oxidization degraded the crystallinity of the GaN/AlN layer. By changing the oxidization point and repeating the GaN/AlN growth, the crystallinity of GaN was recovered. Such polarity control of GaN on Si grown by sputtering shows strong potential for the fabrication of large-diameter +c-GaN template substrates at low cost.

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“…This justifies the absence of doping in these regions. Figure 5 shows that the radiative recombinations are probable and dominant in the wells due to confinement and carrier concentrations in the small volume [69] leading to more photon emission and higher radiative efficiency.…”

Section: The 6-qwled Structurementioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-thick intrinsic quantum well with (x) as indium mole fraction, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Various characteristics such as current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, have been investigated. By controlling the InxGa1−xN(i) number of quantum wells and their indium mole fraction (0.18 or lower), all MQW LED characteristics including radiative recombination rate, needed current, spectral power and emitted light wavelength, are optimized. Increasing (x) value improves radiative recombination rate, spectral power and band gap with lower needed current. Devices with 6 quantum wells and x = 0.16 or 0.18 exhibit best performance. For power saving and environmental purposes, optimal mole ratio is x = 0.16.

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Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Cited by 10 publications

References 34 publications

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

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