Abstract:Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-th… Show more
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