Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices
Abstract:The atomic-layer misorientation during the growth of
a 5 μm
thick AlN thin film on a patterned (0001) sapphire substrate was investigated
by the scan rotation approach using a probe aberration-corrected scanning
transmission electron microscope at a nanometer scale. Through the
geometrical phase analysis of the resulting twisted atomic structure
at different depths below the top surface, it is shown that over 10%
of local tensile and compressive strain is balanced in a 1.6°
twist of the c-planes within the fir… Show more
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