EB projection lithography for 60-80 nm ULSI fabrication

Tokunaga, Kenichi; Koba, Fumihiro; Miyasaka, Mami; Takaishi, Y.; Noda, Kazumi; Yamashita, Hiroshi; Nakajima, Ken; Nozue, Hiroshi

doi:10.1109/vlsit.2000.852767

Cited by 2 publications

(1 citation statement)

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“…Especially, EB direct writing has more complicated environment, because it has a shot stitching besides of a field stitching. We must keep a high stitching accuracy together with high resolution and high CD accuracy when we fabricate advanced ULSIs by using EB technology 6), 7) . Our system extracts a representative edge line of each pattern at the stitching region from the graphical format files (BMP, JPEG etc.)…”

Section: Introductionmentioning

confidence: 99%

<title>Stitching accuracy measurement system for EB direct writing and electron-beam projection lithography (EPL)</title>

et al. 2001

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We have developed a stitching accuracy measurement system for electron beam (EB) direct writing and electron beam projection lithography (EPL). This system calculates the amount of a stitching error between two EB shots from SEM images. It extracts a representative edge line of each pattern from the graphical format files (BMP, JPEG etc.) of SEM images and calculates a distance between each edge line as a stitching error. For obtaining a higher stitching accuracy of EB direct writing or EPL machines, it can analyze the relation of amounts and direction of a stitching error with a field size or a field position of these machines. We could successfully measure about 2.0 nm as a stitching error value in 0.1 µm L/S resist patterns on a bare-Si substrate and obtain 1.2 nm (3σ) as the measurement repeatability. It took 2.5 sec. for this system to measure one stitching region.

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Section: Introductionmentioning

confidence: 99%