Dry etch characteristics of Al-Nd films for TFT-LCD

24.2: Single Layer Al‐Ni‐La‐Si Interconnections for Source and Drain of LTPS‐TFT LCDs Using Direct Contacts with both ITO and poly‐Si

“…In the case of Al-Nd, the etching rate depends on the Nd content, because the vapor pressure of NdCl x by-products during dry etching is very low. Consequently, the Nd remaining phenomenon at the surface of Al-Nd leads to the result that Al-2 at.% Nd dry etching rate was much lower than that of pure Al [10]. To achieve an etching rate higher than 80 % of pure Al, it Micrographs of a line-and-space pattern TEG for Al-0.6 at.% Ni-0.1 at.% La-0.5 at.% Si after dry etching and photo-resist strip are shown in Figs 9 (a) and (b).…”

Influence of Oxygen Addition and Wafer Bias Voltage on Bromine Atom Surface Reaction in a HBr/Ar Inductively Coupled Plasma

“…HBr inductively coupled plasma (ICP) has been used to etch various materials such as C, 1) Pb(Zr x Ti 1Àx )O 3 (PZT), 2) GaN, 3) indium tin oxide (ITO), 4,5) gallium indium zinc oxide (GIZO), 6) Mo, 7) CoFeB, 8) SiC, 9,10) ZnO, 11) Al-Nd, 12) InP, [13][14][15] Pt, 16) and Al 2 O 3 . [17][18][19] Most of all, HBr ICP has been extensively used for the selective etching of Si owing to its good anisotropy, high etching rate, and high selectivity in the reactive ion etching (RIE) process, and has been intensively investigated by many groups.…”

Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

“…Aluminum (Al) alloy thin films [1][2][3][4] are widely used for gate interconnections of amorphous silicon (a-Si) thin-film transistors (TFTs) and source/drain (S/D) interconnections of low-temperature polycrystalline silicon (LTPS) TFTs in liquid crystal displays (LCDs). Among other films used in such components, aluminum-neodymium (Al-Nd) alloy films 2,[4][5][6][7][8][9][10] are most widely used as they possess high resistance to hillock defect formation at high temperatures.…”