24.2: Single Layer Al‐Ni‐La‐Si Interconnections for Source and Drain of LTPS‐TFT LCDs Using Direct Contacts with both ITO and poly‐Si

Kugimiya, Toshihiro; Yoneda, Yoichiro; Kusumoto, Eisuke; Gotoh, Hiroshi; Ochi, Mitsukazu; Kawakami, Nobuyuki

doi:10.1889/1.3069660

Cited by 6 publications

(9 citation statements)

References 8 publications

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“…1(b) shows the S/D and gate interconnections using direct contacts. [15][16][17] Compared with the conventional structure in Fig. 1(a), the TFT structure in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…In the present study, we experimentally demonstrated that Al-Ni alloys possess characteristics most suitable for direct contacts. 16,17) Indeed, the developed Al-Ni alloy interconnections have already been used for the massproduction of LCD panels to reduce manufacturing cost. Although we found that Al-Ni alloys are practically usable, it has not yet been understood why the direct contact between ITO and Al-Ni alloy films exhibits good electrical conduction and what is the major current path across the contact.…”

Section: Introductionmentioning

confidence: 99%

“…Although we found that Al-Ni alloys are practically usable, it has not yet been understood why the direct contact between ITO and Al-Ni alloy films exhibits good electrical conduction and what is the major current path across the contact. 16,17) Our comprehensive and intensive investigation of the current-voltage (I-V) characteristics using nanoprobes 18,19) for specimens fabricated using different processes clarified that Al 3 Ni precipitates generated at the interface of ITO and Al-Ni alloy films play a key role in the direct contact.…”

Section: Introductionmentioning

confidence: 99%

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Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Kugimiya¹,

Okuno²,

Okuno³

et al. 2010

Jpn. J. Appl. Phys.

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“…1(b) shows the S/D and gate interconnections using direct contacts. [15][16][17] Compared with the conventional structure in Fig. 1(a), the TFT structure in Fig.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Kugimiya¹,

Okuno²,

Okuno³

et al. 2010

Jpn. J. Appl. Phys.

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“…11,12 To answer these questions, we investigated the current path using nanoprobes 13,14 and evaluated the band diagram of the ITO/Al-Ni alloy contact by X-ray photoelectron spectroscopy ͑XPS͒ and ultraviolet photoelectron spectroscopy ͑UPS͒. 15-18 As a result, we learned how to achieve even lower resistivity of the ITO/ Al-Ni alloy contact compatible with the production process of a-Si TFTs.…”

mentioning

confidence: 99%

“…1b, Al-Ni alloy interconnections were developed for the first time for direct contacts between the ITO film and the Al-Ni alloy interconnections. 11,12 Presently, the developed Al-Ni alloy interconnections are ready for use in mass production of LCD panels.…”

mentioning

confidence: 99%

Current Path Analysis of the Direct Contact Between ITO and Al–Ni Alloy Films

Kugimiya

Okuno

Kawakami

et al. 2009

J. Electrochem. Soc.

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Al-Ni alloys for single-layer interconnections to be used for amorphous silicon thin-film transistors ͑a-Si TFTs͒ in liquid-crystal displays have been developed. The developed interconnections make possible a direct electrical contact with an indium-tin oxide ͑ITO͒ film without barrier metals, such as Mo and Cr, which are conventionally used for the electrical contacts. In the present paper, we investigated the major current path at the contact between ITO film and the Al-Ni alloy layer using nanoprobes. It was found that the Al 3 Ni precipitations between the ITO film and the Al-Ni alloy layer played an important role of electrically conducting contacts. This led us to a conclusion that it is important to increase local current paths via Al 3 Ni precipitations to achieve a low resistivity at the contact between the ITO film and the Al-Ni alloy layer, which was found to be strongly influenced by the photoresist stripping process successively used for the formation of SiN contact holes in the production of a-Si TFTs.Aluminum ͑Al͒ alloy thin films 1-3 are widely used in the industry of liquid-crystal displays ͑LCDs͒ for gate interconnections of amorphous silicon thin-film transistors ͑a-Si TFTs͒ and source/drain ͑S/D͒ interconnections of low-temperature polycrystalline silicon TFTs. For instance, it is known that aluminum-neodymium ͑Al-Nd͒ alloy films 2,4-6 possess high heat resistance, and the formation of hillock surface defects on the films are suppressed during successive chemical vapor deposition ͑CVD͒ of silicon nitride ͑SiN͒ as well as other high-temperature processes above 300°C in the TFT manufacturing processes. Hence, Al-Nd alloy films are one of the highly reliable materials for interconnections.In the present paper, we propose Al-alloy thin films for direct contacts with indium-tin oxide ͑ITO͒ films and demonstrate that they not only fulfill industrial requirements for the interconnections in LCDs but also can skip unnecessary interconnection fabrication processes, leading to a significant reduction in manufacturing costs. 7 Figure 1a illustrates a conventional stacked layer structure of a-Si TFT gate and S/D interconnections. It is seen that the structure includes refractory metal layers, such as Mo, Cr, and Ti, as diffusion barriers of constituent atoms between the ITO film and the metal interconnections. For this reason, the refractory metals are referred to as barrier metals. 8 Usually, the gate interconnection has a barrier metal layer at the interface with ITO, while the S/D metal interconnection has barrier metal layers on both sides to prevent atomic interdiffusion at the contacts with ITO and a-Si. 9 The barrier metals also achieve low electrical resistivity at the contact with the ITO layer, 9 suppress hillock formation during thermal treatments, 8 and suppress Al diffusion into a-Si in the S/D interconnections. 9,10 Figure 1b illustrates a direct contact structure for gate and S/D interconnections that were studied in the present paper. It is markedly simplified compared with the conventiona...

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Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

et al. 2021

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The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.

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24.2: Single Layer Al‐Ni‐La‐Si Interconnections for Source and Drain of LTPS‐TFT LCDs Using Direct Contacts with both ITO and poly‐Si

Cited by 6 publications

References 8 publications

Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Current Path Analysis of the Direct Contact Between ITO and Al–Ni Alloy Films

Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

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