The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, less damage to the substrate and controllable treatment area, which is more suitable for flexible and large-scale roll-to-roll preparation than thermal treatment. This paper mainly introduces the basic principle of active layer thin films prepared by laser treatment solution, including laser photochemical cracking of metastable bonds, laser thermal effect, photoactivation effect and laser sintering of nanoparticles. In addition, the application of laser treatment in the regulation of MOS-TFT performance is also described, including the effects of laser energy density, treatment atmosphere, laser wavelength and other factors on the performance of active layer thin films and MOS-TFT devices. Finally, the problems and future development trends of laser treatment technology in the application of metal oxide semiconductor thin films prepared by solution method and MOS-TFT are summarized.
Capacitors play an increasingly important role in hybrid integrated circuits, while the MIM capacitors with high capacitance density and small thickness can meet the needs of high integration. Generally speaking, the films prepared with a single metal oxide dielectric often achieve a breakthrough in one aspect of performance, but dielectric layers are required to be improved to get better performance in leakage current, capacitance density, and transmittance simultaneously in modern electronic devices. Therefore, we optimized the performance of the dielectric layers by using multiple metal oxides. We combined zirconia, yttria, magnesium oxide, alumina, and hafnium oxide with the solution method to find the best combination of these five metal oxides. The physical properties of the multi-component films were measured by atomic force microscopy (AFM), ultraviolet-visible spectrophotometer, and other instruments. The results show that the films prepared by multi-component metal oxides have good transmittance and low roughness. The thicknesses of all films in our experiment are less than 100 nm. Then, metal–insulator–metal (MIM) devices were fabricated. In addition, we characterized the electrical properties of MIM devices. We find that multi-component oxide films can achieve good performances in several aspects. The aluminum-magnesium-yttrium-zirconium-oxide (AMYZOx) group of 0.6 M has the lowest leakage current density, which is 5.03 × 10−8 A/cm2 @ 1.0 MV/cm. The hafnium-magnesium-yttrium-zirconium-oxide (HMYZOx) group of 0.8 M has a maximum capacitance density of 208 nF/cm2. The films with a small thickness and a high capacitance density are very conducive to high integration. Therefore, we believe that multi-component films have potential in the process of dielectric layers and great application prospects in highly integrated electronic devices.
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