Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Kugimiya, Toshihiro; Okuno, Hiroshi G.; Okuno, Hiroyuki; Kobayashi, Nobuhiro; Nakai, Junichi; Yoneda, Yoichiro; Kusumoto, Eisuke

doi:10.1143/jjap.49.115701

Cited by 2 publications

(2 citation statements)

References 25 publications

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“…The trend towards further miniaturization and integration of microelectronics has initiated continuous efforts to scale down the size of films for micro-and nano-systems [1]. Al-Ni nanofilms can be used for gate interconnections of silicon thin-film transistors and source/drain interconnections of low-temperature polycrystalline silicon transistors in liquid crystal displays [2,3]. Al-Ni composites are also a new generation of structural materials with potential applications in aerospace and aviation industries.…”

Section: Introductionmentioning

confidence: 99%

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Zhu¹,

Dai²,

Li³

et al. 2020

Nanotechnology

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Amorphous and ferromagnetic Al-Ni nanofilms have been grown by the magnetron-sputtering method with some nanosized crystalline grains embedded therein. Resistivity is demonstrated to transit from a positive temperature coefficient to a negative temperature coefficient (NTC) with increasing the fraction of Ni atoms in the Al-Ni nanofilms. The lattice disorder is deduced to induce the Anderson localization of electrons and the formation of polarons so that the NTC of the resistivity is driven in the Al-Ni nanofilms, different from that in the elemental Al and Ni nanofilms. The electron transport in the Al-Ni nanofilms is dominated by polaron hopping while it is also determined by electron-magnon and electron-phonon scatterings. The electron-magnon scatterings are further revealed to have a more important contribution to the electron transport at low temperatures than electron-phonon scatterings in the amorphous Al-Ni nanofilms. A so-called polaron-metal physical model has thus been proposed to well explain the electron transport in disorder lattices with crystalline grains embedded therein. This study may help to optimize the design of nano-engineered devices.

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Section: Introductionmentioning

confidence: 99%

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Zhu¹,

Dai²,

Li³

et al. 2020

Nanotechnology

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“…The AlO x layer formed on such surfaces was removed by subsequent alkaline cleaning. 29,30) The AlO x layer immediately forms on the surfaces of the Al thin films, while the Al 3 Ni precipitates are not oxidized and maintain the electrical conduction.…”

Section: Introductionmentioning

confidence: 99%

Low driving voltage indium–tin oxide/Al–Ni–Cu–La anode electrodes for top-emission organic light-emitting diodes

Nishiyama

Kugimiya

Okuno

et al. 2017

Jpn. J. Appl. Phys.

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We have developed indium–tin oxide (ITO)/Al–Ni–Cu–La anode electrodes for cost-effective large top-emission organic light-emitting diode (OLED) displays. By combining alkaline cleaning with thermal annealing, the driving voltage of the OLED devices containing Al–Ni–Cu–La thin films was effectively reduced, becoming comparable to that for conventional Ag alloy thin films. Cross-sectional transmission electron microscopy (XTEM) observation revealed that the grains in the Al matrix and the precipitates on the Al–Ni–Cu–La surface were small, resulting in a low driving voltage and a high optical reflectivity. The Al–Ni–Cu–La thin films overcome the oxidation issues that cause an increase in contact resistance due to the formation of AlOx between the Al alloy and the ITO thin films, and could replace conventional anode electrodes having an ITO/Ag/ITO structure.

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Electrical Conduction across the Direct Contact between Indium–Tin Oxide and Al–Ni Alloy Layers

Cited by 2 publications

References 25 publications

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures

Low driving voltage indium–tin oxide/Al–Ni–Cu–La anode electrodes for top-emission organic light-emitting diodes

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