Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

Morikawa, Takahiro; Kurotsuchi, Kenzo; Kinoshita, Masaharu; Matsuzaki, N.; Matsui, Yasuhiro; Fuiisaki, Y.; Hanzawa, S.; Kotabe, Akira; Terao, Motoyasu; Moriya, Hideshige; Iwasaki, Takaya; Matsuoka, M.; Nitta, F.; Moniwa, Masahiro; Koga, Tomohiro; Takaura, N.

doi:10.1109/iedm.2007.4418932

Cited by 39 publications

(35 citation statements)

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“…In the same graph, data corresponding to conventional GST are also reported for sake of comparison. D-alloy and T-alloy results are among the best so far published on high temperature PCM [5][6][7][8][9][10]. The activation energy for crystallization has been evaluated for both compounds, by finding 3.45 eV and 4.30 eV for D-alloy and T-alloy respectively.…”

Section: Thermal Stabilitymentioning

confidence: 95%

“…Several works have recently addressed the limited retention of Phase Change Memory by proposing material engineering or dopants inclusion [5][6][7][8][9][10], but no mainstream has still been found. This paper is focused on two specific compositions in the Ge-rich region, namely D-alloy and T-alloy, whose crystallization temperature is respectively 250°C and 350°C, so definitely higher than reference GST.…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

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Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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Section: Thermal Stabilitymentioning

confidence: 95%

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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“…The highest reported temperature in literature of data archival lifetime for ten years had been at least 150 o C using indium doped GeTe films [3]. To evaluate data retention Ga 3 Te 2 Sb 12 and Ge 2 Sb 2 Te 5 thin films were isothermally soaking at elevated temperatures.…”

Section: Resultsmentioning

confidence: 99%

Electrical characteristics of Ga<inf>3</inf>Te<inf>2</inf>Sb<inf>12</inf> with high thermal stability for pram

Kao

Chu

Tsai

et al. 2010

2010 3rd International Nanoelectronics Conference (INEC)

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“…However, the binary compound GeTe with different doping [6], InSbTe [7], InGeTe [8], and GaSbTe [9] alloys are also under scrutiny for their higher crystallization temperature of interest for applications at high temperatures, e.g. in automotive electronics.…”

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confidence: 99%

Functional Properties of Phase Change Materials from Atomistic Simulations

Caravati

Sosso

Bernasconi

2015

Molecular Dynamics Simulations of Disordered Materials

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Chalcogenide alloys are materials of interest for optical recording and electronic nonvolatile memories. These applications rest on an ensemble of functional properties: a fast and reversible transformation between the amorphous and the crystalline phase upon heating and a strong optical and electronic contrast between the two phases that allow discriminating the two states of the memory. We discuss the insights gained from atomistic simulations based on Density Functional Theory on the functional properties of the prototypical phase change compounds Ge 2 Sb 2 Te 5 and GeTe. We review the results on the structural and bonding properties of the crystalline and amorphous phases, the origin of the optical and electronic contrast between the two phases and the source of the fast crystallization of the supercooled liquid. The results on the crystallization kinetics obtained from large scale simulations with interatomic potentials based on Neural Network methods are also discussed.

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Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

Cited by 39 publications

References 0 publications

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Electrical characteristics of Ga<inf>3</inf>Te<inf>2</inf>Sb<inf>12</inf> with high thermal stability for pram

Functional Properties of Phase Change Materials from Atomistic Simulations

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