Distributed power amplifier with novel integration technique of broadband impedance transformer using pseudomorphic HEMT and gallium nitride HEMT

Abstract

An advance approach of distributed power amplifier (DPA) design has been introduced in this study, based on broadband impedance transformer integration. By identifying the DPA's optimum impedance over the frequency range with load pull measurement technique, the impedance transformer with mixed‐lumped elements using real‐frequency technique is designed. The prototype of the transformer network is integrated with the three‐stage DPA with pseudomorphic High‐Electron‐Mobility Transistor (HEMT) and gallium nitride HEMT technologies. Experimental output power performance achieves 40 dBm over bandwidth operation from 0.1 to 2.4 GHz, and the power added efficiency reaches 30% in average with gain of 30 dB. This proposed technique is essential to maximise DC–radio frequency conversion to the load termination and the transformer is having advantages over size area, implementation in small form factor and low‐cost approach particularly compatible for radio communications applications.

Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application

“…This is because altering Lg does not have influential consequences on the quantity of carriers in the channel, which directly connects and affect to I ds . 9 Shorter gate length however causes more DIBL and threshold voltage degradation. However up streaming the length of gate assists in controlling the electric field generated under the channel as a result of gate contact.…”

“…5,6 This could be due to incrementing evidence regarding the limitation of conventional AlGaN HEMTs, where total strain caused by lattice mismatch, negative effects of polarization and short channel effects contribute as main factors, which eventually lead to significant degradation in frequency response, and increase in current collapse effect. 7 Furthermore, adverse outcomes of surface states and polarization in AlGaN/GaN HEMT have been observed, 8,9 which transforms to extremely detrimental drain current values and catastrophic compression of radio frequency power, compromising device reliability and stability. In addition, there is lattice mismatch anomaly 6 in AlGaN heterostructures causing surface dislocations and excessive strain effect along the epi-structure.…”

Improved Design for the High Gain Wideband Matrix Amplifiers Using Differential Cells and Microwave CMOS Technology

“…Although transistor technology has been provided most significant driver of gain and also bandwidth with microwave signals and RF amplifier s, and the product of gain with bandwidth (GBW) is constant; however, the transistors are physical environment (designed) affect and limits in which the practical gain and bandwidth of amplifiers [3]. The design cost of a radio frequency (RF) device is based on integration, and performance is cheap and enhanced by the force of nanoscale scaling complementary-metal-oxidesemiconductor (CMOS) technology [4]. The high-rate broadband communication systems need to use wideband amplifiers as critical building blocks.…”

Design of a high‐gain silicon BJT and an E‐pHEMT hybrid matrix amplifier with an optimum filter‐matching technique

“…Non-term cascode DA using 0.15 μm GaN-SiC HEMT technology exhibits a gain of 10 dB and P out of 1-2 W with P dc of 5.2 W across 0.1-45 GHz [8]. DA with a novel integration technique is presented with pHEMT, and GaN HEMT technology demonstrates 30 dB gain and 40 dBm P out across the 0.1-2.4 GHz bandwidth and 30% of PAE [9]. 0.25 μm GaN HEMT DA exhibits 12.8-13.7 dB gain, 12.3-14.1 dBm P out and 27-34% PAE across 2-6 GHz bandwidth [10].…”