Optimization of Graded AlInN/AlN/GaN HEMT Device Performance Based on Quaternary Back Barrier for High Power Application

Abstract

Conventional HEMT devices perform poorly especially in the Ka band due to buffer electron spillage and poor confinement. Microwave and defense industries are key consumers of electronics and require transistors to be free from adverse effects namely current collapse in the drain for elevated power application. This work investigates the effects of graded AlInN barrier together with emerging quaternary material on device output in providing an alternate solution to industrial needs. The Aluminum mole fraction had been linearly increased along the graded section, with the addition of the AlInGaN back barrier. Improved current density and electric field demonstrate potential for high linearity application. The back barrier improves electron confinement in the channel while the effect of graded barrier was found to enhance output and transfer characteristics where the former incremented by almost 60% and the latter by around 1.9 A/mm, compared to conventional devices. Concentration of 2-dimensional electron gas (2DEG) had elevated by four times in the channel region with speed of electrons at 17.8 × 106 cms−1 in the back barrier. Overall, it has been demonstrated that the optimized AlInN/GaN-based HEMT shows excellent electrical characteristics and is a promising alternative to AlGaN/GaN HEMT for high frequency and high power application.

Temperature-Dependent Phase Variations in Van Der Waals CdPS3 Revealed by Raman Spectroscopy

“…The low mobility compared to several other devices in the literature could be due to the poor contact with metal electrode, as reported earlier in case of WSe 2 and MoS 2 [55]. It may also be possible to improve the performance by using high-K dielectric materials in top-gated devices [58][59][60].…”

Effect of InGaN Channel on Radio‐Frequency Performance in High‐Electron‐Mobility Transistors with an InAlGaN Barrier

“…The AlInN achieves lattice-matched growth on GaN by adjusting the composition, but the growth of high-quality AlInN is limited by poor miscibility. [6] The quaternary AlInGaN alloy barrier can enhance its miscibility [7] and provide an additional degree of freedom to individually regulate energy bandgaps and stress states through the addition of Ga, [8,9] which is also expected to minimize the gate-to-channel distance at high-saturation current density. [10,11] To work at higher frequencies, the gate length in the conventional AlGaN/GaN HEMTs should be significantly scaled down.…”

Phonon-assisted reduction of hot spot temperature in AlInN ternaries

“…Aluminum and indium nitride ternaries have attracted much interest because of their excellent physical and chemical properties, such as ultra-hardness, high thermal conductivity, and chemical inertness that withstand high temperatures. AlInN based high-electron-mobility transistors (HEMTs) have been investigated to provide graded and improved polarization charges with minimal effects of strain [1][2][3]. Several researchers have introduced devices based on AlInN with maximum current capabilities greater than those of AlGaN/GaN structures [4].…”