Directed self-assembly of quantum structures by nanomechanical stamping using probe tips

Taylor, Curtis R.; Marega, E.; Stach, Eric A.; Salamo, Gregory J.; Hussey, Lindsay; Muñoz, Martı́n; Malshe, Ajay P.

doi:10.1088/0957-4484/19/01/015301

Cited by 38 publications

(30 citation statements)

References 40 publications

(47 reference statements)

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“…The positioning of QDs can be achieved by modification of the GaAs surface in the nanoscale. Electron beam lithography (EBL) [4-6,14], local oxidation [15-17], focused ion beam [18], or nanomechanical stamping [19] can be used to fabricate small holes on the substrate surface. The deformation of surface chemical potential leads to accumulation of In adatoms in the holes which then act as preferential nucleation sites for InAs QDs.…”

Section: Introductionmentioning

confidence: 99%

Influence of hole shape/size on the growth of site-selective quantum dots

Mayer¹,

Helfrich

Schaadt³

2013

Nanoscale Res Lett

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The number of quantum dots which nucleate at a certain place has to be controllable for device integration. It was shown that the number of quantum dots per nucleation site depends on the size of the hole in the substrate, but other dimensions of the nucleation site are vague. We report on the influence of hole shape on site-selectively grown InAs quantum dots (QDs) by molecular beam epitaxy. Dry etching of the GaAs wafers was used because of its high anisotropic etching characteristic. Therefore, it was possible to verify the influence of several hole shape parameters on the subsequent QD growth independently. We show that the nucleation of these QDs depends on several properties of the hole, namely its surface area, aspect ratio of the surface area, and depth. Especially, the aspect ratio shows a big influence on the number of nucleating QDs per site. With knowledge of these dependencies, it is possible to influence the number of QDs per site and also its distribution.

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Section: Introductionmentioning

confidence: 99%

Influence of hole shape/size on the growth of site-selective quantum dots

Mayer¹,

Helfrich

Schaadt³

2013

Nanoscale Res Lett

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“…Surface patterns involving the introduction of dislocations by nanoindentation, using standard and atomic force microscopy (AFM) techniques, have been used in order to determine the nucleation site of quantum dots and nanocrystals. [7][8][9][10] It is therefore important to investigate the details of the early stages of nanoscale mechanical deformation in cubic semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Early stages of mechanical deformation in indium phosphide with the zinc blende structure

Almeida

Prioli

Wei

et al. 2012

Journal of Applied Physics

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Nanoindentations were performed on a cubic semiconductor using a cono-spherical diamond tip with a 260 nm radius. The tip produces a single point of contact with the crystal surface allowing indentations with nano-scale dimensions. The early stages of deformation on (100) InP with the zinc-blende structure were observed to happen by the sequential introduction of metastable dislocation loops along the various slip planes directly beneath the point of contact. Locking of the dislocations loops forms a hardened region that acts as an extended tip during subsequent indentation, eventually leading to multiple bulk-like displacements (pop-in events) and to material pile up in the vicinity of the indentation pit. The first pop-in marks the transition of deformation from the nanometer to the micrometer scale.

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“…22 The introduction of dislocations has been used to modulate strain in GaAs for site selective nucleation of InAs crystallites. 23 Scratching is another method to introduce dislocations in semiconductor crystals. It has been recently shown that scratching of InP can produce highly localized distributions of dislocations along the scratch line.…”

Section: Introductionmentioning

confidence: 99%

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

Fonseca-Filho

Almeida

Prioli

et al. 2010

Journal of Applied Physics

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Linear arrays of InAs nanocrystals have been produced by metalorganic vapor phase epitaxy on scratches performed with an atomic force microscope tip along specific crystallographic directions of an ͑100͒ InP wafer. Scratches along ͗110͘ generate highly mobile defects that extend far from the scratch region along easy-glide directions. On the other hand, ͗100͘ scratches result in highly-localized plastic deformation, hardening, and possibly frictional heating. In both cases, growth of nanocrystals was observed only on the scratched areas. Random nucleation of nanocrystals is observed along ͗110͘ scratches, while linearly ordered growth occur along ͗100͘ scratches. We attribute these observations to the delocalized nature of the dislocations in the ͗110͘ case, giving the appearance of random nucleation, while highly localized crystal defects along the ͗100͘ scratch lines act as nucleation sites for the growth of linear arrays of nanocrystals.

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Directed self-assembly of quantum structures by nanomechanical stamping using probe tips

Cited by 38 publications

References 40 publications

Influence of hole shape/size on the growth of site-selective quantum dots

Influence of hole shape/size on the growth of site-selective quantum dots

Early stages of mechanical deformation in indium phosphide with the zinc blende structure

Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

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