When two identical two-dimensional periodic structures are superposed, a mismatch rotation angle between the structures generates a superlattice. This effect is commonly observed in graphite, where the rotation between graphene layers generates Moiré patterns in scanning tunneling microscopy images. Here, a study of intravalley and intervalley double-resonance Raman processes mediated by static potentials in rotationally stacked bilayer graphene is presented. The peak properties depend on the mismatch rotation angle and can be used as an optical signature for superlattices in bilayer graphene. An atomic force microscopy system is used to produce and identify specific rotationally stacked bilayer graphenes that demonstrate the validity of our model.

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The growth of the dental implant market increases the concern regarding the quality, efficiency, and lifetime of dental implants. Titanium and its alloys are dominant materials in this field thanks to their high biocompatibility and corrosion resistance, but they possess a very low wear resistance. Besides problems related to osteointegration and bacterial infections, tribocorrosion phenomena being the simultaneous action between corrosion and wear, are likely to occur during the lifetime of the implant. Therefore, tribocorrosion resistant surfaces are needed to guarantee the preservation of dental implants. This work focused on the incorporation of magnesium, together with calcium and phosphorous, in the structure of titanium oxide films produced by micro-arc oxidation (MAO). The characterization of morphology, chemical composition, and crystalline structure of the surfaces provided important insights leading to 1) a better understanding of the oxide film growth mechanisms during the MAO treatment; and 2) a better awareness on the degradation process during tribocorrosion tests. The addition of magnesium was shown to support the formation of rutile which improves the tribocorrosion properties of the surfaces.

The nanoscale friction between an atomic force microscopy tip and graphene is investigated using friction force microscopy (FFM). During the tip movement, friction forces are observed to increase and then saturate in a highly anisotropic manner. As a result, the friction forces in graphene are highly dependent on the scanning direction: under some conditions, the energy dissipated along the armchair direction can be 80% higher than along the zigzag direction. In comparison, for highly-oriented pyrolitic graphite (HOPG), the friction anisotropy between armchair and zigzag directions is only 15%. This giant friction anisotropy in graphene results from anisotropies in the amplitudes of flexural deformations of the graphene sheet driven by the tip movement, not present in HOPG. The effect can be seen as a novel manifestation of the classical phenomenon of Euler buckling at the nanoscale, which provides the non-linear ingredients that amplify friction anisotropy. Simulations based on a novel version of the 2D Tomlinson model (modified to include the effects of flexural deformations), as well as fully atomistic molecular dynamics simulations and first-principles density-functional theory (DFT) calculations, are able to reproduce and explain the experimental observations.

In this work, we clarify the features of the lateral damage of line defects in single layer graphene. The line defects were produced through well-controlled etching of graphene using a Ga(+) focused ion beam. The lateral damage length was obtained from both the integrated intensity of the disorder induced Raman D band and the minimum ion fluence. Also, the line defects were characterized by polarized Raman spectroscopy. It was found that graphene is resilient under the etching conditions since the intensity of the defect induced Raman D peak exhibits a dependence on the direction of the lines relative to the crystalline lattice and also on the direction of the laser polarization relative to the lines. In addition, electrical measurements of the modified graphene were performed. Different ion fluences were used in order to obtain a completely insulating defect line in graphene, which was determined experimentally by means of charge injection and electric force microscopy measurements. These studies demonstrate that a Ga+ ion column combined with Raman spectroscopy is a powerful technique to produce and understand well-defined periodic arrays of defects in graphene, opening possibilities for better control of nanocarbon devices.

The direct determination of the crystallographic orientation of graphene sheets was performed using lattice resolution atomic force microscopy images. A graphene sample, micromechanically exfoliated onto a SiO2 substrate showing well defined crystal edges, was imaged in lateral force mode. The lateral force images reveal the periodicity of the graphene hexagonal structure allowing the visualization of the lattice symmetries and determination of the crystal orientation. Crystal edges predominantly formed by zigzag or armchair directions were identified. The nature of the edges was confirmed by Raman spectroscopy.

The influence of sliding speed in the nanoscale friction forces between a silicon tip and monolayer and multilayer graphene were investigated with the use of an atomic force microscope. We found that the friction forces increase linearly with the logarithm of the sliding speed in a highly layer-dependent way. The increase in friction forces with velocity is amplified at the monolayer. The amplification of the friction forces with velocity results from the introduction of additional corrugation in the interaction potential driven by the tip movement. This effect can be interpreted as a manifestation of local thermally induced surface corrugations in nanoscale influencing the hopping dynamics of the atoms at the contact. These experimental observations were explained by modeling the friction forces with the thermally activated Prandtl-Tomlinson model. The model allowed determination of the interaction potential between tip and graphene, critical forces, and attempt frequencies of slip events. The latter was observed to be dominated by the effective contact stiffness and independent of the number of layers.

Nanoindentations were performed on a cubic semiconductor using a cono-spherical diamond tip with a 260 nm radius. The tip produces a single point of contact with the crystal surface allowing indentations with nano-scale dimensions. The early stages of deformation on (100) InP with the zinc-blende structure were observed to happen by the sequential introduction of metastable dislocation loops along the various slip planes directly beneath the point of contact. Locking of the dislocations loops forms a hardened region that acts as an extended tip during subsequent indentation, eventually leading to multiple bulk-like displacements (pop-in events) and to material pile up in the vicinity of the indentation pit. The first pop-in marks the transition of deformation from the nanometer to the micrometer scale.