1996
DOI: 10.1103/physrevb.54.8743
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Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

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Cited by 512 publications
(229 citation statements)
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References 31 publications
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“…[1][2][3][4][5][6] The development of such structures followed the exploitation of the threedimensional confinement in self-assembled InAs/GaAs Stranski-Krastanow islands and has demonstrated low threshold current and reduced temperature-dependent lasing characteristics. In order to increase the emission wavelength of InAs/GaAs QDs to the telecommunication range ͑1.31-1.55 m͒, the QD layers needed to be formed as substantially larger islands compared to the first generation of QD laser devices.…”
Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning
confidence: 99%
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“…[1][2][3][4][5][6] The development of such structures followed the exploitation of the threedimensional confinement in self-assembled InAs/GaAs Stranski-Krastanow islands and has demonstrated low threshold current and reduced temperature-dependent lasing characteristics. In order to increase the emission wavelength of InAs/GaAs QDs to the telecommunication range ͑1.31-1.55 m͒, the QD layers needed to be formed as substantially larger islands compared to the first generation of QD laser devices.…”
Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning
confidence: 99%
“…In order to increase the emission wavelength of InAs/GaAs QDs to the telecommunication range ͑1.31-1.55 m͒, the QD layers needed to be formed as substantially larger islands compared to the first generation of QD laser devices. 1,2 Large QDs can be directly synthesized by overgrowth ͑i.e., supplying material well beyond the onset of nucleation͒, 7 by controlling the epitaxial growth conditions 8,9 or by growing on higher-index surfaces. 10,11 Metamorphic buffer layers have been used to this effect.…”
Section: Role Of Segregation In Inas/gaas Quantum Dot Structures Cappmentioning
confidence: 99%
“…[7][8][9][10][11] In a VQDM, two or more adjacent dots separated by thin barrier(s) are stacked one by one along the growth axis. 12 Using wellestablished epitaxial growth protocols, geometrical properties such as height, barrier thickness, and relative position of the QDs can all be precisely controlled. By applying an electric field along the growth axis, the energy levels of the QDs can be simultaneously tuned relative to one another and to a doped substrate.…”
Section: Introductionmentioning
confidence: 99%
“…This large increase cannot be explained just by the superposition of three independent QD layers, thus it may be due to a decreased exciton lifetime reported in vertically coupled QD stacks [17] leading to a relatively higher PL intensity. For QD stacks, it is further reported that the QD size slowly increases layer by layer, leading to an overall redshift of the QD PL [18] as seen in Fig.…”
Section: Resultsmentioning
confidence: 94%