We show that by illuminating an InGaAs/GaAs self-assembled quantum dot with circularly polarized light, the nuclei of atoms constituting the dot can be driven into a bistable regime, in which either a threshold-like enhancement or reduction of the local nuclear field by up to 3 Tesla can be generated by varying the intensity of light. The excitation power threshold for such a nuclear spin "switch" is found to depend on both external magnetic and electric fields. The switch is shown to arise from the strong feedback of the nuclear spin polarization on the dynamics of spin transfer from electrons to the nuclei of the dot.The hyperfine interaction in solids [1] arises from the coupling between the magnetic dipole moments of nuclear and electron spins. It produces two dynamical effects: (i) inelastic relaxation of electron spin via the "flip-flop" process ( Fig.1a) and (ii) the Overhauser shift of the electron energy [2]. Recently, the hyperfine interaction in semiconductor quantum dots (QDs) has attracted close attention [3,4,5,6,7,8,9,10,11,12,13,14] fuelled by proposals for QD implementation in quantum information applications [15]. The full quantization of the electron states in QDs is beneficial for removing decoherence mechanisms present in extended systems [16,17]. However, the electron localization results in a stronger (than in a bulk material) overlap of its wave-function with a large number of nuclei (N ∼ 10 4 in small selfassembled InGaAs/GaAs dots and up to 10 5 ÷ 10 6 in electrostatically-defined GaAs QDs), and the resulting hyperfine interaction with nuclear spins has been found to dominate the decoherence [3,4,5,12,13,14] and life-time [9] of the electron spin at low temperatures.In this Letter, we report the observation of a pronounced bistable behaviour of nuclear spin polarisation, S, in optically pumped self-assembled InGaAs/GaAs dots. In our experiments, spin-polarized electrons are introduced one-by-one into an individual InGaAs dot at a rate w x (see Fig.1b) by the circularly polarized optical excitation of electron-hole pairs 120 meV above the lowest QD energy states. Due to hole spin-flip during its energy relaxation, both bright and dark excitons can form in the dot ground state. The former will quickly recombine radiatively with a rate w rec ≈ 10 9 sec −1 , whereas the dark exciton can recombine with simultaneous spin transfer to a nucleus via a spin "flip-flop" process (as in Fig.1a) at the rate w rec N p hf [12,18]. Here N is the number of nuclei interacting with the electron and p hf is the probability of a "flip-flop" process, which from our perturbation theory treatment is given by:(1) Here γ is the exciton life-time broadening, h hf is the strength of the hyperfine interaction of the electron with a single nucleus and E eZ is the electron Zeeman splitting. E eZ is strongly dependent on the effective nuclear magnetic field B N generated by the nuclei. This provides a feedback mechanism between the spin transfer rate and the degree of nuclear polarization (B N ∝ S) in the dot [19]. Th...

The influence of a GaAsSb capping layer on the structural properties of self-assembled InAs/ GaAs quantum dots ͑QDs͒ is studied on the atomic scale by cross-sectional scanning tunneling microscopy. QDs capped with GaAs 0.75 Sb 0.25 exhibit a full pyramidal shape and a height more than twice that of the typical GaAs-capped QDs, indicating that capping with GaAsSb suppresses dot decomposition. This behavior is most likely related to the reduced lattice mismatch between the dot and the capping layer.

Please check the document version of this publication:• A submitted manuscript is the version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User Agreement: We report a combined experimental and theoretical analysis of Sb and In segregation during the epitaxial growth of InAs self-assembled quantum dot structures covered with a GaSbAs strain-reducing capping layer. Cross-sectional scanning tunneling microscopy shows strong Sb and In segregation which extends through the GaAsSb and into the GaAs matrix. We compare various existing models used to describe the exchange of group III and V atoms in semiconductors and conclude that commonly used methods that only consider segregation between two adjacent monolayers are insufficient to describe the experimental observations. We show that a three-layer model originally proposed for the SiGe system ͓D. J. Godbey and M. G. Ancona, J. Vac. Sci. Technol. A 15, 976 ͑1997͔͒ is instead capable of correctly describing the extended diffusion of both In and Sb atoms. Using atomistic modeling, we present strain maps of the quantum dot structures that show the propagation of the strain into the GaAs region is strongly affected by the shape and composition of the strain-reduction layer.

Sizable nuclear spin polarization is pumped in individual electron-charged InP / GaInP dots in a wide range of external magnetic fields B Z =0-5 T by circularly polarized optical excitation. We observe nuclear polarization of up to Ϸ40% at B Z = 1.5 T corresponding to an Overhauser field of Ϸ1.2 T. We find a strong feedback of the nuclear spin on the spin pumping efficiency. This feedback, which is produced by the Overhauser field, leads to nuclear spin bi-stability at low magnetic fields of B Z Ϸ 0.3− 1 T. We find that the splitting in magnetic field between the trion radiative recombination peaks markedly increases, when the Overhauser field in the dot cancels the external field. This counterintuitive result is shown to arise from the opposite contribution of the electron and hole Zeeman splittings to the optical transition energies.