Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Vinokurov, D. A.; Kapitonov, V. A.; Nikolaev, D. N.; Pikhtin, N. A.; Stankevich, A. L.; Shamakhov, V. V.; Bondarev, A. D.; Vavilova, L. S.; Tarasov, I. S.

doi:10.1134/s1063782611100241

Cited by 4 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2(b), compositional modulations already clearly visible in the first periods, due to a higher Indium and Phosphorus content in individual layers. Thus the related light scattering may become important also for single strain-compensated QW lasers I-1 10 nm 50 nm 50 nm with high Indium composition emitting at 1220 nm [17]. Another observation is a much smaller lateral periodicity of the lateral compositional modulation of 20-40 nm instead of 100-400 nm revealed in Fig.…”

Section: Nmmentioning

confidence: 95%

“…To keep the gain region compact allowing the vertical mode selection [3,6,11], on the one hand, and avoiding defect formation in stacked InGaAs QWs [17], on the other hand, strain compensation by GaAsP barriers is usually applied. It was noted, however, that 1060 nm laser diodes with GaAsP strain compensation barriers demonstrate higher waveguide losses and thus lower wall-plug efficiencies as compared to the lasers with stacked QWs grown without strain compensation [18].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High differential efficiency tilted wave laser

et al. 2014

View full text Add to dashboard Cite

We report results on 1060 nm GaAs/GaAlAs-based Tilted Wave Lasers employing multiple InGaAs quantum wells without strain compensation as active medium. The devices are edge-emitting lasers composed of a thin active waveguide optically coupled to a thick passive waveguide responsible to form a tilted optical wave that results in two narrow lobes in the vertical far field profile of the emitted laser light. Devices with different thicknesses of the passive waveguide have been fabricated. The laser with the 26 µm-thick waveguide has low internal losses of 1.4 cm -1 , reaches for the as cleaved facets device with 1.5 mm-long cavity the differential efficiency of 81%. The 50 µm broad area device demonstrates the maximum wall-plug efficiency in the continuous wave (cw) mode ~50% and the linear output power up to and above 4 W. The laser light is concentrated in two narrow vertical beams, each 2 o full width at half maximum in a good agreement with theory.

show abstract

Section: Nmmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

High differential efficiency tilted wave laser

et al. 2014

View full text Add to dashboard Cite

show abstract

Morphology evolution in strain-compensated multiple quantum well structures

Ledentsov¹,

Shchukin²,

Rouvimov³

2014

Appl. Phys. Lett.

View full text Add to dashboard Cite

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Aleshkin

Baidus

Dubinov

et al. 2016

Applied Physics Letters

View full text Add to dashboard Cite

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

show abstract

Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

Cited by 4 publications

References 9 publications

High differential efficiency tilted wave laser

High differential efficiency tilted wave laser

Morphology evolution in strain-compensated multiple quantum well structures

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Contact Info

Product

Resources

About