Morphology evolution in strain-compensated multiple quantum well structures

Ledentsov, N. N.; Shchukin, V. A.; Rouvimov, Sergei

doi:10.1063/1.4862436

Cited by 5 publications

(2 citation statements)

References 23 publications

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“…Black-white contrasts inside the InGaAs region are due to the presence of In-rich areas. Compositional analysis, similar to that described in [14], was performed by energy dispersive x-ray spectroscopy (EDS) and confirmed the lateral size of InAsrich domains of ∼10 nm. No signs of dislocations were observed.…”

Section: Methodsmentioning

confidence: 69%

High temperature laser diode based on a single sheet of quantum dots

Ledentsov¹,

Shchukin²,

Maximov³

et al. 2015

Semicond. Sci. Technol.

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A single sheet of high-density InGaAs quantum dots (QDs) is used as a gain medium of InGaAs-GaAs-AlGaAs lasers. The devices operate at high power in the continuous mode beyond 160 °C with an emission wavelength up to ∼1.27 μm. At short cavity lengths a strong broadening (>300 nm) of the electroluminescence spectrum is observed at high current densities, permitting light sources for broadly wavelength tuneable and multi-wavelength infrared lasers based on a single gain chip, and related frequency conversion devices for the whole visible spectrum range. High power cw operation (>2 W) limited by catastrophic optical mirror damage is realized.

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Section: Methodsmentioning

confidence: 69%

High temperature laser diode based on a single sheet of quantum dots

Ledentsov¹,

Shchukin²,

Maximov³

et al. 2015

Semicond. Sci. Technol.

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“…22 Having different phosphorus contents can improve the high characteristic temperatures of the threshold current density for lasers. [23][24][25] It has been demonstrated that to obtain a low threshold and a high differential gain, the quantum well has to be designed to have a density of states that is as low as possible and a closely matched density of states in the valence and conduction bands. This is very dependent on the band offsets.…”

Section: Introductionmentioning

confidence: 99%

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Dong

Sun

et al. 2016

Phys. Chem. Chem. Phys.

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The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results.

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