Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Dong, Hailiang; Sun, Jing; Ma, Suxia; Liang, Jinxing; Lü, Taiping; Jia, Zhigang; Liu, Xuguang; Xu, Bingshe

doi:10.1039/c5cp07805a

Cited by 15 publications

(4 citation statements)

References 73 publications

(73 reference statements)

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“…3(b). [29] It is supposed that the suppression of In segregation by the GaAs insertion layer plays a more significant role in the of the optical properties of the In-GaAs/AlGaAs MQWs structure. Thus, the non-radiative recombination is largely suppressed and the integral strength of PL for InGaAs/GaAs/AlGaAs MQWs is still increased compared with InGaAs/AlGaAs MQWs as a result.…”

Section: Resultsmentioning

confidence: 99%

Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

Kong

et al. 2023

Chinese Phys. B

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This work related to the In segregation and its suppression in InGaAs/AlGaAs quantum well is investigated using high-resolution XRD and PL, combined with the state-of-the-art aberration corrected scanning transmission electron microscopy (Cs-STEM) techniques. To facility our study, we grow two multiple quantum wells (MQWs) samples, which are almost identical except that in sample B that a thin GaAs layer is inserted in each of the InGaAs well and AlGaAs barrier layer comparing to pristine InGaAs/AlGaAs MQWs (sample A). Our study indeed shows the direct evidences that In segregation occurs in the InGaAs/AlGaAs interface, and the effect of the GaAs insertion layer on suppressing the segregation of In atoms is also demonstrated in the atomic-scale. Therefore, the atomic-scale insights are provided to understand the segregation behavior of In atoms and to unravel the underlying mechanism of the effect of GaAs insertion layer on the improvement of crystallinity, interface roughness, and further an enhanced optical performance of InGaAs/AlGaAs QWs.

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Section: Resultsmentioning

confidence: 99%

Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

Kong

et al. 2023

Chinese Phys. B

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“…GaAs-related LO phonons from InGaAs/GaAsP QWs are known to consist of two LO phonon modes [18]-one from the GaAs buffer layer because of the thin QW that can be penetrated into the GaAs buffer layer [19], and the other from the InGaAs layer that exhibits a GaAs-like LO phonon peak. As shown by the dashed line in Figure 3, the GaAs-like LO frequency in the ideal strain-free In 0 .…”

Section: Resultsmentioning

confidence: 99%

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

Zeng

Song

et al. 2021

Applied Sciences

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InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.

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“…Here, if we consider the charge transport between inorganic layers as a tunneling process mediated by the organic interlayer shown in Figure 15a, [237,238] then the two properties of the junction controlling the tunneling probability are the barrier width and height. [239][240][241] Whilst the former can be adjusted through the size of the spacer cation, the barrier energy height depends both on the energetic alignment between the inorganic and organic layers, [19,239,242] and the degree of intermolecular electronic coupling between the neighboring organic cations. [19,142,216,243] Several approaches directed toward enhancing the charge transport across the organic layer are currently emerging, as illustrated in Figure 15b, and discussed below.…”

Section: Functional Spacer Cations For Enhanced Charge Transportmentioning

confidence: 99%

Layered Perovskites in Solar Cells: Structure, Optoelectronic Properties, and Device Design

Sirbu

Balogun

Milot

et al. 2021

Advanced Energy Materials

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optoelectronic properties akin to industrial juggernauts gallium arsenide and silicon. [1,2] Yet, the materials are compatible with solution-processing techniques such as inkjet printing and spray coating. [3] This unprecedented combination has led to the development of solar cells which already show power conversion efficiencies of over 25%, similar to state-of-the-art poly-Si and other thin-film technologies, in just over 10 years of development. [4] Hybrid perovskites are particularly interesting for indoor applications, with impressive efficiencies of over 35% demonstrated under indoor illumination which may prove a viable option to power the ever expanding Internet of Things. [5] Rather than competing with the current technology giants, perovskites can work together with other solar cell technologies in a tandem configuration. Record efficiencies of over 29% for silicon-perovskite tandem solar cells have already been reported and further progress is expected in the near future. [6] Although perovskite solar cells (PSCs) are on the verge of mass production, two main challenges remain: stability [7] and toxicity. [8] Multiple reviews already address the toxicity concern, and it will not be discussed here. [9][10][11] Layered hybrid perovskites (LPKs) have emerged as an answer to battle stability concerns. Although known for decades, LPKs have only recently been incorporated in photovoltaic (PV) applications, resulting in modest device power conversion efficiencies due to poorer optoelectronic properties. [12][13][14] However, their key advantage is the stabilizing effects of the organic interlayers, which prevents perovskite degradation. [15,16] The organic spacer inhibits ion migration which prevents the formation of irreversible degradation products. [17] Alternatively, LPKs can be deposited over the state-of-the-art perovskite materials to combine the high performance of 3D perovskites with the stabilizing properties of LPKs. [15] Here, the limiting factor is inefficient charge transport across the organic interlayer, currently preventing the full exploitation of the layered structure in PSCs.This can be approached in two ways, either by keeping the LPK layer very thin, currently the most popular approach, or by increasing the electrical conductivity of the material. [18,19] The conductivity can be enhanced through increasing the number of inorganic layers n, but this comes at the price of reduced stability. [20][21][22] The better approach is to enhance the charge transport in LPKs through the molecular engineering of the organic Layered hybrid perovskites (LPKs) have emerged as a viable solution to address perovskite stability concerns and enable their implementation in wide-scale energy harvesting. Yet, although more stable, the performance of devices incorporating LPKs still lags behind that of state-of-the-art, multication perovskite materials. This is typically assigned to their poor charge transport, currently caused by the choice of cations used within the organic layer. On balance, a compromise bet...

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Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode

Cited by 15 publications

References 73 publications

Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

Atomic-scale insights of indium segregation and its suppression by GaAs insertion layer in InGaAs/AlGaAs multiple quantum wells

Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells

Layered Perovskites in Solar Cells: Structure, Optoelectronic Properties, and Device Design

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