Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Abstract

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

Impact of dislocations in monolithic III-V lasers on silicon: a theoretical approach

“…5(a) and (b). The simulated QD LI curves to the left confirm the experimentally observed trends of increased threshold currents and reduced slope efficiencies 30,31 , whereas the QW LI curves to the right support the tendency of monolithic QW lasers on silicon to have higher threshold current densities 5,6,9 . One well-known factor causing high threshold currents is a short carrier lifetime 19 , as would be expected from simulations with high dislocation densities.…”

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

“…The threshold power densities were 45 kW/cm 2 [18] and 75 kW/cm 2 [19] for the samples B and A, respectively. The structure C which was grown similarly to the structure B (with the only one difference in the additional doping of the Al 0.3 Ga 0.7 As cladding layers provided in order to create a p-n junction), was used to fabricate the microstrip [20] and microdisk [21] laser diodes. At room temperature, diodes emitted at 0.99 µm (Figure 4) with a threshold current density of 5.5 kA/cm 2 (pulse duration of 1 µs and repetition rate of 400 Hz) for a 2.7 mm long and 20 µm microstrip laser and 28 kA/cm 2 (pulse duration of 0.5 µs and repetition rate of 150 Hz) for the 27 µm diameter microdisk laser.…”

“…First, the virtual Ge/Si substrates were initially significantly more defective (threading dislocation densities of 10 7 ÷ 10 8 cm −2 [11]) in comparison with GaAs substrates. Secondly, APBs appear during growth on Ge/Si substrates which lead to the formation of a developed surface with a roughness of at least several nanometers [20]. The high density of defects and the higher surface roughness can significantly affect the incorporation of in adatoms into the InGaAs QW.…”

Стимулированное излучение на длине волны 1.3 mum в метаморфной структуре InGaAs/InGaAsP с квантовыми ямами, выращенной на подложке Ge/Si (001)

“…8 В настоящее время для реализации " оптоэлектроники на крем-нии" [1] наметился прогресс в создании гибридных лазерных струк-тур на точно ориентированных подложках Si(001). Так, были про-демонстрированы лазеры диапазона 1−1.1 µm на основе гетеро-структур GaAs/AlGaAs с квантовыми ямами (КЯ) InGaAs [2][3][4][5]. В то же время гибридные гетеролазеры A 3 B 5 для оптических межсоединений в кремниевой микроэлектронике должны излучать в области прозрачности объемного Si (λ > 1.2 µm).…”