Diode forward and reverse recovery model for power electronic SPICE simulations

Liang, Yuhao; Gosbell, V.J.

doi:10.1109/63.56526

Cited by 84 publications

(19 citation statements)

References 10 publications

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“…Another example of models is presented in [12]. However, it is characterized by its equivalent electrical circuit, so it is not directly related to the diode technology and it is difficult to extract design parameters.…”

Section: Introductionmentioning

confidence: 99%

“…These models try to solve the complexity of physical phenomena governing the device operation. The standard SPICE model [12] of PiN diode is not suitable as avalanche phenomena are not accurately modeled. Whatever the formulation implemented to take care of avalanche phenomena is, the diode circuit model is not sufficiently related to the diode technology to help in the extraction of design parameters.…”

Section: Introductionmentioning

confidence: 99%

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A novel approach to extract accurate design parameters of PiN diode

Salah¹,

Ghedira²,

Garrab³

et al. 2007

Int J Numerical Modelling

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SUMMARYAccurate modelling of PiN diode transient behaviour is necessary to extract design parameters which are not documented in datasheets. To meet this requirement, this paper introduces a novel approach giving the possibility to identify accurate parameters of a given device. The used technique is based only on two stages. First, the design parameters are initialized and optimized. Second, they are refined by minimizing the cost function which depends on the transient switching parameters (I RM , V RM and t rr ).With a simple and CPU time-saving approach this technique leads to extract design parameters without necessarily knowing the exact technological architecture of the PiN diode. Moreover, in order to validate the proposed approach and the parameter extraction procedure three commercial diodes are tested. A good agreement between experimental and simulation data is obtained.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A novel approach to extract accurate design parameters of PiN diode

Salah¹,

Ghedira²,

Garrab³

et al. 2007

Int J Numerical Modelling

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show abstract

“…Several power diode models have been proposed for use in circuit simulators (Danielsson 1985, Liang and Gosbell 1990, Takakis 1992, Kvien et al 1993, Ma et al 1993, Strollo 1994, Conway and Lacy 1993, Persson 1991. which can be classi® ed into following three types based upon their implementation method, namely…”

Section: Introductionmentioning

confidence: 99%

A fully-numerical model for PiN diodes implemented in the Saber circuit simulator

Li¹,

Mawby²

1998

International Journal of Electronics

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The integration of a full 1D numerical model for a power diode, into a commercial circuit simulator (Saber) is demonstrated for the ® rst time. The model is based upon the solution of the full set of device equations making very few simpli-® cations, thus retaining all the key elements of the physical operation of the device, and as such is therefore valid under all operating conditions. The model is veri® ed against experimental measurements and full 2D numerical simulations of the device. The method used here can also be applied to model other power devices, which exhibit charge storage e ects such as thyristors and IGBTs.

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“…The SPICE sub-circuit models for reverse recovery behavior of PiN diodes are mainly physics-based and hence, depend on device parameters. The physics of PiN diodes are described in [3]- [9] whereas some of the SPICE models are provided in [10]- [16]. SPICE models are accurate in modelling PiN diodes, although prior knowledge of all device parameters is required which may be hindered by the fact that some of them are not on the manufacturers' datasheet.…”

mentioning

confidence: 99%