A novel dynamic frequency divider IC is realized by injectionlocking a broadly tunable push-pull oscillator. The injectionlocking process is explained using a simple pumped-delay model of a two-stage ring oscillator. Two different dynamic dividers were fabricated in the Hughes 0.1 pm gate-length InP HEMT process. The first covers 15 -68 GHz while the second operates over the entire band from 50 to 75 GHz. I I fIN Figure 2. Two-Stage Pumped-Delay Ring Oscillator Model 0-7803-3504-X/96 $5.00 0 1996 IEEE GaAs IC Symposium -137