A novel 75 GHz InP HEMT dynamic divider

Madden, Chris; Snook, D.R.; Tuyl, R.L. Van; Le, Minh Vuong; Nguyen, L.D.

doi:10.1109/gaas.1996.567827

Cited by 16 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This scheme offers advantages over dynamic circuit techniques such as replacing the positive feedback latch pair with a negative feedback pair ("super-dynamic" flipflop) (9), or RF techniques such as injection locking a broadly tunable oscillator (11). The frequency range of operation can be easily traded off with the maximum frequency, and it retains the basic functional characteristics of static dividers such as ease of integration, small size, and robustness to component variations.…”

Section: Divider Circuit Design and Performancementioning

confidence: 99%

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

Gutierrez-Aitken

Kaneshiro

Matsui

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

High speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBT) are the preferred approach for systems operating at clock frequencies of 40 GHz and above (1-6). In this paper we report a novel InAlAs/InGaAs/InP double-HBT (DHBT) with a cantilevered base layer and undercut collector. We fabricated and demonstrated an 80 GHz 2:1 digital frequency divider, and a 5 GHz 8-bit phase/7-bit magnitude Direct Digital Synthesizer (DDS) chip with approximately 3000 transistors using this technology.

show abstract

Section: Divider Circuit Design and Performancementioning

confidence: 99%

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

Gutierrez-Aitken

Kaneshiro

Matsui

et al. 2001

Int. J. Hi. Spe. Ele. Syst.

View full text Add to dashboard Cite

show abstract

“…Injection-locked dividers have successfully been developed for various microwave frequency bands including 4 GHz divide-by-16 [8], 10 GHz divide-by-6 [10], and 18 GHz divide-by-4 or 5 [11]. At millimeter-waves, V-band divide-by-4 divider was demonstrated by cascading two divide-by-2 injection locked dividers with limited output power and rather high power dissipation [9]. Manuscript In this letter, a high-performance second harmonic injectionlocked microwave monolithic integrated circuit (MMIC) frequency divider exhibiting a wide locking range with small dc power dissipation has been developed at V-band using crosscoupled FETs.…”

Section: Introductionmentioning

confidence: 99%

“…This problem can be overcome by another type of analog frequency divider called harmonic injection-locked divider. It provides division ratios more than two as well as extended bandwidth and high input sensitivity [8], [9]. Injection-locked dividers have successfully been developed for various microwave frequency bands including 4 GHz divide-by-16 [8], 10 GHz divide-by-6 [10], and 18 GHz divide-by-4 or 5 [11].…”

Section: Introductionmentioning

confidence: 99%

V-band harmonic injection-locked frequency divider using cross-coupled FETs

Jeong

Kwon

2004

IEEE Microw. Wireless Compon. Lett.

View full text Add to dashboard Cite

A V-band 1/2 frequency divider is developed using harmonic injection-locked oscillator. The cross-coupled field effect transistors (FETs) and low quality-factor microstrip resonator are employed as a wide-band oscillator to extend the locking bandwidth. The second harmonic of free-running oscillation signal is injected to the gates of cross-coupled FETs for high-sensitivity superharmonic injection locking. The fabricated microwave monolithic integrated circuit frequency divider using 0.15-m GaAs pHEMT process showed a maximum locking range of 7.4 GHz (from 65.1 to 72.5 GHz) under a low power dissipation of 100 mW. The maximum single-ended output power was as high as 3 dBm.Index Terms-Cross-coupled field effect transistors (FETs), frequency divider, microwave monolithic integrated circuit (MMIC), superharmonic injection locking.

show abstract

“…The limited bandwidth of dynamic dividers is a drawback but poses no problem in many applications which require divider operation only in a specific frequency range. Dynamic dividers manufactured in III-V-technologies and, recently, in SiGe technology achieve maximum operating frequencies of 60GHz to 75GHz [1,2,3]. However, most of these circuits operate over relatively narrow bandwidths of less than one octave.…”

Section: Infineon Technologies Ag Corporate Research Munich Germanymentioning

confidence: 99%

A 79 GHz dynamic frequency divider in SiGe bipolar technology

Knapp

Meister²,

Wurzer³

et al.

2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056)

View full text Add to dashboard Cite

Conventional static frequency dividers use master-slave flipflops to achieve frequency division. They allow broadband operation down to DC as long as the slew rate of the input signal is high enough. Their upper frequency, however, is limited by the gate delay τ D to a value of approximately 1/(2 τ D ). Significantly higher operating frequencies can be achieved by dynamic frequency dividers. The limited bandwidth of dynamic dividers is a drawback but poses no problem in many applications which require divider operation only in a specific frequency range. Dynamic dividers manufactured in III-V-technologies and, recently, in SiGe technology achieve maximum operating frequencies of 60GHz to 75GHz [1,2,3]. However, most of these circuits operate over relatively narrow bandwidths of less than one octave. This regenerative frequency divider exploits the high-speed potential of SiGe technologies to combine high maximum frequency with operation over wide frequency range. Figure 12.7.1 shows the basic block diagram for regenerative frequency division [4]. The circuit consists of a mixer, a low-pass filter, and an amplifier. The output signal of the amplifier serves as local oscillator (LO) signal for the mixer. Assuming an input frequency f IN and an LO frequency f OUT , the mixer output signal will contain the frequencies f IN ± f OUT . Only the component f IN -f OUT can pass the low-pass filter and stable operation is possible under the condition f IN -f OUT = f OUT . This leads to the desired divide-by-two function with f OUT = f IN / 2. The maximum operating frequency of this divider type is limited by the frequency response of the feedback loop. At high frequencies the loop gain becomes insufficient for divider operation. The lower limit for the input frequency is reached if the low-pass filter no longer suppresses the frequency component of 3f IN / 2 occurring at the mixer output. The obtainable ratio of f IN,max /f IN,min is approximately three. By using an active mixer the basic circuit shown in Figure 12.7.1 can be further simplified. Since the required gain is provided by the mixer, no additional amplifier is necessary. Moreover, the low-pass filter can also be omitted because of the inherent low-pass characteristics of the mixer frequency response. Figure 12.7.2 shows the block diagram of the dynamic frequency divider circuit. It contains an active double-balanced mixer performing the regenerative frequency division and an output buffer/ limiter. This limiter stage is necessary to keep the output amplitude of the divider independent of the applied input signal level. Figure 12.7.3 shows the circuit diagram of the regenerative divider containing the balanced mixer. The input signal is applied to one of the mixer ports, whereas the mixer output is connected to the second mixer input via three cascaded emitter followers. These emitter followers provide the necessary level shifting and help to optimize the frequency response of the feedback loop. The output buffer is connected to the second emitter follower stage....

show abstract

A novel 75 GHz InP HEMT dynamic divider

Cited by 16 publications

References 12 publications

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

V-band harmonic injection-locked frequency divider using cross-coupled FETs

A 79 GHz dynamic frequency divider in SiGe bipolar technology

Contact Info

Product

Resources

About