Diffusion in Semiconductors

CaseyJr., H. C.; Pearson, G. L.

doi:10.1007/978-1-4684-0904-8_2

Cited by 14 publications

(2 citation statements)

References 153 publications

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“…This indicates that a diffusion enhancement occurs in the presence of high energy photons. Diffusion coefficients, as calculated by Boltzmann-Matano analysis 6 using SIMS and ECV profiles, confirm the observed diffusion enhancement. Figure 2 plots the diffusion coefficient values as deduced for the different experimental configurations processed at 950°C, 25 s. As expected, the diffusion coefficient is lower for case B compared to A and C. As we turn on additional UV light ͑case C&UV, B&UV͒ the value increases clearly.…”

supporting

confidence: 71%

Impact of ultraviolet light during rapid thermal diffusion

Noël

Slaoui

Müller

et al. 1998

Applied Physics Letters

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supporting

confidence: 71%

Impact of ultraviolet light during rapid thermal diffusion

Noël

Slaoui

Müller

et al. 1998

Applied Physics Letters

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“…To overtake these conditions, various n-type (S, Se, Te, Si) [11][12][13][14] and p-type (Zn, Mg, C) [15][16][17] dopants have been used in MOVPE growth of GaAs. However, materials like (S, Se, Te, Zn, and Mg) show memory effects, high diffusion coefficients and have limited dopant incorporation [18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

Béji

Jani

Gibart

2001

phys. stat. sol. (a)

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We report the growth of a p + -n + -GaAs tunnel diode by atmospheric pressure metalorganic vapour phase epitaxy (MOVPE), using carbon (C) and silicon (Si) as p-type and n-type dopants, respectively. The more efficient incorporation of silicon on donor sites and carbon on acceptor sites, results in a tunnel junction with peak current density up to 50 Acm --2 , and peak-to-valley current ratio up to 20 at room temperature. This represents the best result ever reported for a GaAs tunnel diode by MOVPE. The calculated theoretical peak current density agrees substantially with our experimental and reported results.

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Smart Materials

Awadelkarim

Suliman

2005

Encyclopedia of RF and Microwave Engineering

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In this article, we give the reader a brief introduction to a selected number of smart materials and structures. These materials include semiconductors and related structures, superconductors, piezoelectric materials, and shape memory materials. These materials are discussed in terms of their electrical, mechanical, optical, and chemical properties and possible engineering applications in the fields of nanoelectronics, nano/microelectromechanical systems, optoelectronics, and communication.

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Diffusion in Semiconductors

Cited by 14 publications

References 153 publications

Impact of ultraviolet light during rapid thermal diffusion

Impact of ultraviolet light during rapid thermal diffusion

High Quality p+-n+-GaAs Tunnel Junction Diode Grown by Atmospheric Pressure Metalorganic Vapour Phase Epitaxy

Smart Materials

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