2010
DOI: 10.1149/1.3266882
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Different Growth-Temperature Effects on the Liquid-Phase-Deposited SiO[sub 2] Grown on Strained SiGe

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Cited by 3 publications
(1 citation statement)
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“…The deposition rate is increased by addition of boric acid (H 3 BO 3 ) to the SiO 2 -saturated H 2 SiF 6 solution, as a result of the reaction normalH 3 BO 3 + 4 HF BF 4 + normalH 3 normalO + + 2 normalH 2 normalO According to eq , the concentration of hydrofluoric acid (HF) in SiO 2 -saturated H 2 SiF 6 solution will decrease upon addition of H 3 BO 3 , and supersaturated SiO 2 solution will form according to eq . SiO 2 films on substrates of Si wafer, glass, gallium arsenide, and SiGe, among others, have been successfully obtained with the LPD method. …”
Section: Preparation Characterization and Evaluation Of Coatingsmentioning
confidence: 99%
“…The deposition rate is increased by addition of boric acid (H 3 BO 3 ) to the SiO 2 -saturated H 2 SiF 6 solution, as a result of the reaction normalH 3 BO 3 + 4 HF BF 4 + normalH 3 normalO + + 2 normalH 2 normalO According to eq , the concentration of hydrofluoric acid (HF) in SiO 2 -saturated H 2 SiF 6 solution will decrease upon addition of H 3 BO 3 , and supersaturated SiO 2 solution will form according to eq . SiO 2 films on substrates of Si wafer, glass, gallium arsenide, and SiGe, among others, have been successfully obtained with the LPD method. …”
Section: Preparation Characterization and Evaluation Of Coatingsmentioning
confidence: 99%