Dielectric properties of NiO and NiO(Li)

Fuschillo, N.; Lalevic, B.; Leung, B.

doi:10.1016/0040-6090(74)90263-6

Cited by 19 publications

(9 citation statements)

References 7 publications

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“…Hence the maximum estimated relative error of ε is ±7%. The dielectric constant of pure NiO film is found to be 9.7 at 1 MHz, which is close to that value~11 determined for NiO film of thickness 5 μm at radiofrequencies [8]. The variation of ε with frequency (1-1000 kHz) is shown in Fig.…”

Section: Figuresupporting

confidence: 58%

“…It has a cubic FCC (Fm 3m) structure of lattice constant 0.4172 nm [7]. The dielectric constant of 5 μm film is~11 at radiofrequencies [8] and of a bulk is~17 [9]. NiO films have a wide range of applications, such as transparent p-type conductive films [4], anode material in organic light emitting diodes (OLED) [10], electrochromic display devices [11,12], gas sensors [13], automobile mirrors [14], hetrojunction solar cells [15],…etc.…”

Section: Introductionmentioning

confidence: 99%

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Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices

Dakhel

2012

Journal of Non-Crystalline Solids

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Section: Figuresupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices

Dakhel

2012

Journal of Non-Crystalline Solids

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“…In the case that contamination or oxides may have been present on the nanowire surface, this process would cause dielectric breakdown. The threshold field for NiO is in the range of 0.6…9×10 8 V/m and characterised by a substantially reduced NiO resistance of at least five orders of magnitude [19,20]. Indeed, the total resistance = c + t + nw , where nw is the resistance of the actual nanowire, dropped from an initial order of kΩ-MΩ down to typically <100 Ω until it dropped no further for successive bias sweeps.…”

Section: Sample Preparationmentioning

confidence: 99%

Effect of annealing on the electrical and magnetic properties of electrodeposited Ni and permalloy nanowires

Dost

Yinqing

Zhang

et al. 2020

Journal of Magnetism and Magnetic Materials

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The influence of annealing on the microstructure and the electrical and magnetic properties of cylindrical nickel-based nanowires has been investigated. Nanowires of nickel of ~275 nm diameter and of permalloy (Py) of ~70 nm diameter were fabricated by electrochemical deposition into nanoporous templates of polycarbonate and anodic alumina, respectively. Characterization was carried out on as-grown and up to 650 °C heat-treated nanowires. Transmission electron microscopy imaging and diffraction of the nanowires showed a temperature-correlated grain growth of an initially nanocrystalline structure (untreated) with <8 nm (Ni) and <20 nm (Py) grains towards coarser poly-crystallinity after heat treatment with grains up to ~160 nm (Ni) and ~70 nm (Py), the latter being limited by the nanowire width. The electrical conductivity of individual as-grown and 650 °C annealed Ni nanowires was measured in-situ by scanning electron microscopy. At low current densities, the conductivity of annealed nanowires was estimated to have doubled over as-grown nanowires. We attribute this increase to the observed grain growth. The annealed nanowire was subsequently subjected to increasing current densities. Above 120 kA.mm-2 the nanowire resistance started to rise. At 450 kA.mm-2 , the nanowire melted and current flow ceased. Magnetometry of as-grown and annealed nanowire arrays showed them to display quasi-thin film magnetic properties. Coercivity and saturation field were inversely correlated in annealed wires and a 25% tunability in these properties was achieved at just 200 °C.

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“…Dielectric properties of NiO ceramics have been studied theoretically and experimentally [18][19][20][21] under different conditions and the value of dielectric constant r of 11.9 (D = E,  = r 0, where D is the electric displacement field, E is the electric field,  is dielectric permittivity and 0 is dielectric permittivity of vacuum) has been accepted for pure NiO at ambient conditions, which has contributions from both electronic and ionic polarization [22]. Fuschillo, et al [21] and Rao, et al [22] studied the dielectric properties of the NiO ceramics in a wide range of frequencies as a function of temperature. Their investigation revealed a constant dielectric permittivity up to room temperature, which was expected as the polarization mechanisms in NiO are not sensitive to neither temperature nor frequency.…”

Section: Introductionmentioning

confidence: 99%

“…It shows diverse interesting phenomena under different condition, like spin-phonon coupling at Neel temperature [13], insulator-metal transition under high pressure [14,15], anomalous magnetic behavior in nanoparticle structures [16], ferromagnetism induced by the point defects [17] etc. Dielectric properties of NiO ceramics have been studied theoretically and experimentally [18][19][20][21] under different conditions and the value of dielectric constant r of 11.9 (D = E,  = r 0, where D is the electric displacement field, E is the electric field,  is dielectric permittivity and 0 is dielectric permittivity of vacuum) has been accepted…”

Section: Introductionmentioning

confidence: 99%

Dielectric Properties of Strained Nickel Oxide Thin Films

Kashir

Jeong

Lee

et al. 2019

J. Korean Phys. Soc.

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The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant, and the more defective films, which were grown at low temperatures shows a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin films can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.

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Dielectric properties of NiO and NiO(Li)

Cited by 19 publications

References 7 publications

Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices

Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices

Effect of annealing on the electrical and magnetic properties of electrodeposited Ni and permalloy nanowires

Dielectric Properties of Strained Nickel Oxide Thin Films

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