Dielectric Properties of Strained Nickel Oxide Thin Films

Abstract

The dielectric properties of NiO thin films grown by pulsed laser deposition have been studied as a function of strain at temperature from 10 to 300 K. Above 150 K, the contribution of space-charge polarization to the dielectric permittivity of NiO films becomes dominant, and the more defective films, which were grown at low temperatures shows a drastical increase in the dielectric constant up to room temperature. While the atomically-ordered film, which was grown at high temperature doesn't show any considerable change in the dielectric constant in the range from 10 to 300 K. Below 100 K, the effect of strain on the dielectric constant becomes clear. An increase in dielectric permittivity is observed in the strained films while the relaxed film doesn't show any remarkable deviation from its bulk value. The low-temperature dielectric behavior of NiO thin films can be interpreted based on the effect of strain on the lattice dynamics of rocksalt binary oxides.

Structural, dielectric and electrical characterization of (Co)x(Ni/bentonite) composites

“…This behaviour is due to the increase of the absorbed energy which leads to an increase in the number of the charge carriers that contribute to the conduction process. Also, it is obvious that the conductivity decreased by increasing the Co content, this is due to the distribution of Co allows the formation of conductive three-dimensional networks throughout the composite, which assisting the charge carriers to hop from one cluster to another, as previously reported [14]. The ac conductivity dependence of frequency is given by ( σ ac = Bω s ), where s is the universal exponent factor and B is constant.…”

“…Also, Ni-Co alloy has high mechanical strength, moderate thermal conductivity and outstanding electrocatalytic and magnetic properties [12]. Despite the dielectric properties of different Ni-based composites are widely investigated [13,14], Ni-Co/bentonite gives rise to new types of nanocomposite with original properties. The dielectric properties are considered to be one of the most interesting parameters governing the utilization of Ni-Co/bentonite in innovative research work.…”

Ferroelectric and Dielectric Properties of Hf0.5Zr0.5O2 Thin Film Near Morphotropic Phase Boundary

“…The results for different capacitors show a decrease in dielectric capacitance as the frequency increases (Figure 5c). This behavior was expected as some polarization mechanisms can be suppressed at higher frequencies, in particular, space-charge polarization that occurs owing to the structural defects [41,42].…”

“…This behavior was expected, as some polarization mechanisms can be suppressed at higher frequencies, in particular, space‐charge polarization that occurs owing to the structural defects. [ 40,41 ] Therefore, by increasing the frequency, we attempted to separate the contribution of space‐charge polarization from the intrinsic polarization mechanisms (i.e., electronic, ionic, dipole, and domain wall polarizations). Figure 5c shows that even at 1 MHz, the sample with the maximum (red branch) exhibits the highest capacitance compared with the other samples.…”

Oxides for Rectenna Technology

“…Hence, the measured band gap and permittivity can vary even for similarly prepared oxide films. Table 4 depicts measured values of static and dynamic permittivity for most commonly used oxides in MIM diodes for rectenna, such as NiO [105][106][107][108][109], Al 2 O 3 [110][111][112][113][114][115][116][117][118][119], ZnO [108,[120][121][122], TiO 2 [114,119,[123][124][125][126][127][128], CuO [8,129,130], Ta 2 O 5 [91,108,113,126,131], Nb 2 O 5 [17,51,91,108], Cr 2 O 3 [132,133], SiO 2 [114,119], HfO 2 [114,134,135], V 2 O 5…”