Investigations on Sn-doped Ni oxide thin films and their use as optical sensor devices

Structural and optoelectronic properties of Zn-incorporated CdO films prepared by sol–gel method

“…In addition, at NIR region for k > 2500 nm, the T(k) curves show a clear damping due to the absorption by a high density of free electrons according to classical Drude theory. The optical bandgap E g is expressed in the wellknown formula as [23,24]:…”

Fabrication and study of self-assembled NiO surface networks assisted by Sn doping

“…A. A. Dahkel [13] reported that by decreasing the concentration of point defects, and hence increasing NiO stoichiometry, a change from (111) to ( 200) is promoted, which in our case should involve higher defect density for the sample Ni:Sn-(9:1). Moreover, the presence of SnO 2 or Sn in the precursors also promotes a shift to higher diffraction angles, as compared with the reference NiO, (Fig.…”