Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz

Θεοδωροπούλου, Μαρία; Pagonis, D. N.; Nassiopoulou, A. G.; Krontiras, C. A.; Georga, S. N.

doi:10.1002/pssc.200780153

Cited by 7 publications

(6 citation statements)

References 13 publications

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“…The effective electrical conductivity and the dielectric constant of the thermally oxidized macroporous silicon samples are listed in Table 1. It is observed from the frequency dependence of capacitance of the macroporous silicon samples that the dielectric constant is almost independent of frequency as observed by others 20. This is expected in 1 MHz frequency range 21.…”

Section: Resultssupporting

confidence: 74%

Impedance measurement for microstructure characterization and internal surface estimation of macroporous silicon

RoyChaudhuri

Jana

Bandopadhyay

2010

Physica Status Solidi (a)

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In this paper, a simple and convenient method based on impedance measurement has been proposed for the first time to evaluate the average porosity, pore radius, and internal surface area of macroporous silicon structure fabricated by electrochemical method. The porosity and the average pore radius have been obtained by developing a geometrical model and applying the generalized effective medium approximation theory to the dc and ac impedance measurement of both unoxidized and thermally oxidized macroporous silicon. The internal surface area per unit volume is then computed from the porosity and the pore radius using the same model. The method has been applied to a wide range of porosity from 30 to 58% fabricated on p-type <100> silicon with a resistivity of 10-20 V cm. Experimental verification of porosity, mean pore radius, and internal surface area have been performed by standard gravimetric technique and by top-view and crosssection SEM imaging, respectively. A typical mean pore radius, porosity, and internal surface area of a macroporous silicon sample has been obtained to be 1.52 mm, 54.2%, and 3565.7 cm 2 /cm 3 , respectively, from the impedance measurement and 1.5 mm, 55%, and 3666.7 cm 2 /cm 3 from SEM and gravimetric analysis which shows that the results are within 2% of the values obtained by conventional methods. The advantages of this method over the other recently reported techniques for similar characterization have been discussed.

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Section: Resultssupporting

confidence: 74%

Impedance measurement for microstructure characterization and internal surface estimation of macroporous silicon

RoyChaudhuri

Jana

Bandopadhyay

2010

Physica Status Solidi (a)

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“…From Figure 4 , it can be seen that the values of the extracted permittivity using broadband electrical measurements of the specific CPW TLines are between those obtained with the Bruggeman’s and Vegard’s models for non-oxidized PSi. On the other hand, by using the more elaborated Vegard’s law described in [ 27 ], which takes into account the presence of a native oxide shell surrounding the Si nanostructures (in our case, we considered a native oxide thickness of 1.5 nm and a Si skeleton thickness of 10 nm), better agreement is achieved between our experimental results and the calculated ones.…”

Section: Methodssupporting

confidence: 53%

“…Both the Vegard’s model for non-oxidized Si and the Maxwell-Garnett’s model have been proven to be insufficient to explain the results of several experiments [ 13 , 24 , 26 ]. An improved version of the Vegard’s model incorporates also the SiO 2 native oxide surrounding the Si nanostructures composing the material [ 27 ]. Better agreement between the model and experimental results is obtained in this case.…”

Section: Methodsmentioning

confidence: 99%

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Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Sarafis

Nassiopoulou

2014

Nanoscale Res Lett

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In this work, the dielectric properties of porous Si for its use as a local substrate material for the integration on the Si wafer of millimeter-wave devices were investigated in the frequency range 140 to 210 GHz. Broadband electrical characterization of coplanar waveguide transmission lines (CPW TLines), formed on the porous Si layer, was used in this respect. It was shown that the dielectric parameters of porous Si (dielectric permittivity and loss tangent) in the above frequency range have values similar to those obtained at lower frequencies (1 to 40 GHz). More specifically, for the samples used, the obtained values were approximately 3.12 ± 0.05 and 0.023 ± 0.005, respectively. Finally, a comparison was made between the performance of the CPW TLines on a 150-μm-thick porous Si layer and on three other radiofrequency (RF) substrates, namely, on trap-rich high-resistivity Si (trap-rich HR Si), on a standard complementary metal-oxide-semiconductor (CMOS) Si wafer (p-type, resistivity 1 to 10 Ω.cm) and on quartz.PACS84.40.-x; 77.22.Ch; 81.05.Rm

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“…The approach used in this work is more appropriate for broadband material characterization than the complex impedance analysis [9,17].…”

Section: Introductionmentioning

confidence: 99%

RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements

Contopanagos

Zacharatos

Nassiopoulou

2008

Solid-State Electronics

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Dielectric characterization of macroporous thick silicon films in the frequency range 1 Hz–1 MHz

Cited by 7 publications

References 13 publications

Impedance measurement for microstructure characterization and internal surface estimation of macroporous silicon

Impedance measurement for microstructure characterization and internal surface estimation of macroporous silicon

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

RF characterization and isolation properties of mesoporous Si by on-chip coplanar waveguide measurements

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