Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Sarafis, Panagiotis; Nassiopoulou, A. G.

doi:10.1186/1556-276x-9-418

Cited by 43 publications

(16 citation statements)

References 28 publications

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“…For all the fabricated samples in this work, the Maxwell Garnett effective media model can be used to relate solid volume fraction with the material properties. [29b] – The Maxwell Garnett equation for nonmagnetic dielectric materials can be rearranged as

\frac{\frac{n_{eff}^{2} - 1}{n_{e ff}^{2} + 2}}{\frac{n_{normalm}^{normal2} - 1}{n_{normalm}^{normal2} + 2}} = f

where n eff is the effective index of the nanolattice material, n m is the index of the constituent material, and f is the solid volume fraction. Setting

β = (\frac{n_{eff}^{2} - 1}{n_{eff}^{2} + 2}) / (\frac{n_{normalm}^{2} - 1}{n_{normalm}^{2} + 2})

as a unitless parameter normalized to the shell material, a simple linear relationship to volume fraction can be found,

β = f

.…”

Section: Resultsmentioning

confidence: 99%

“…The data fits the analytical model well, indicating a linear relationship between the normalized indices and volume fraction. Note that Maxwell Garnett model is not suitable for binary mixtures with comparable volume fractions, therefore our analysis is limited to 40% solid volume fraction. This simple effective media model serves as a convenient guide for the index prediction and lattice geometry/material design.…”

Section: Resultsmentioning

confidence: 99%

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Ordered 3D Thin‐Shell Nanolattice Materials with Near‐Unity Refractive Indices

Zhang

Bagal

Dandley

et al. 2015

Adv Funct Materials

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The refractive indices of naturally occurring materials are limited, and there exists an index gap between indices of air and available solid materials. With many photonics and electronics applications, there has been considerable effort in creating artificial materials with optical and dielectric properties similar to air while simultaneously being mechanically stable to bear load. Here, a class of ordered nanolattice materials consisting of periodic thin‐shell structures with near‐unity refractive index and high stiffness is demonstrated. Using a combination of 3D nanolithography and atomic layer deposition, these ordered nanostructured materials have reduced optical scattering and improved mechanical stability compared to existing randomly porous materials. Using ZnO and Al2O3 as the building materials, refractive indices from 1.3 down to 1.025 are achieved. The experimental data can be accurately described by Maxwell Garnett effective media theory, which can provide a guide for index design. The demonstrated low‐index, low‐scattering, and high‐stiffness materials can serve as high‐quality optical films in multilayer photonic structures, waveguides, resonators, and ultra‐low‐k dielectrics.

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\frac{\frac{n_{eff}^{2} - 1}{n_{e ff}^{2} + 2}}{\frac{n_{normalm}^{normal2} - 1}{n_{normalm}^{normal2} + 2}} = f

where n eff is the effective index of the nanolattice material, n m is the index of the constituent material, and f is the solid volume fraction. Setting

β = (\frac{n_{eff}^{2} - 1}{n_{eff}^{2} + 2}) / (\frac{n_{normalm}^{2} - 1}{n_{normalm}^{2} + 2})

as a unitless parameter normalized to the shell material, a simple linear relationship to volume fraction can be found,

β = f

.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Ordered 3D Thin‐Shell Nanolattice Materials with Near‐Unity Refractive Indices

Zhang

Bagal

Dandley

et al. 2015

Adv Funct Materials

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show abstract

“…Porous silicon structures have a wellar mechanical starkness, chemical retention and conformance with silicon cannulation hence has a spacious scope of potential employments like waveguides [11], biological testing equipment [12], chemical sensors [13], photo electronic solar batteries [14] and fuel cells [15]. In accordingly for proves the chemical and physical properties of anodizied porous silicon, several techniques have been developed among them rapid thermal oxidation [16], photo electrochemical etching [17], photochemical grown [18], stain etching [19] and electrochemical etching [11]. In our research, we have been studied the attributes of PSi samples prepared by electrochemical etching ECE such as morphological properties by using scanning electron microscope SEM, the structural properties like porosity and thickness have been measured by using the optical microscope and electrical properties have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterization of PSi/Si Electrochemically Formed as Photodetectors

Jbaier

2016

JNUS

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Porous silicon were constructed electrochemically with various form ationtimes (5, 10, 15 and 20) min with current density 20mA/cm 2 on p-type silicon. The influence of formation time on the structural and morphological properties have been presented by using SEM and optical microscopy. The SEM analysis was showed that the porous silicon layer has a uniform structure and this structure varied with increasing the etching time. The optical microscope was carried out to study the thickness, the pore diameter and etching rate of porous silicon layer, we have found the porous silicon thicknessis accretion with excess the formation time and pores diameter increased also. The etching rate was found to increase from 1.25 to 1.53 µm/min. The electrical properties of PSi samples which represented by I-V characterization under dark show that when the etching time increased the current which pass through the layer of porous silicon decreased because of increasing the resistivity of PSi surface. From I-V charecteristics PSi layer show a good rectification and high responsivity for visible and near IR region.

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“…7). Copper is considered to be perfectly conductive (everything is reflected), quartz does not have frequency dispersion and the dielectric constant (ε = 3.8 for SiO 2 [75]) does not change with temperature. VO 2 is modeled in the framework of the Drude theory: the plasma frequency and the collision frequency of electrons depend on the temperature [76].…”

Section: K 340 K 345 Kmentioning

confidence: 99%

“…11). To explain the frequency dependence of the reflection coefficient, a theoretical model has been proposed within the framework of the Drude theory, since the optical characteristics of VO 2 undergo significant changes in PT [75]. Fig.10.…”

Section: Properties Of Vo 2 Films In Ehf Rangementioning

confidence: 99%

The interaction of electromagnetic waves with VO2 nanosized spheres and films in optical and extremely high frequency range.

Коледов¹,

Шавров²,

Shahmirzadi³

et al. 2018

JRE

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Abstract. Recently the interaction effects of electromagnetic waves (EMW) with metallic nanoparticles and holes in nanosized films, called nano-antennas (NAs)attract great interest because of prospective applications in sensors technology. The conventional NAs and nanoparticles have fixed functionality, therefore the tunability of these structures are desired. One of the conventional method to obtain tunability is exploiting phase transition (PT) materials. Vanadium dioxide (VO 2 ) is known as a PT material and its complex dielectric constant are varied by temperature due to structural transformation, accompanying metal-insulator transition (MIT). This material is an insulator at room temperature (RT) and becomes metal above a critical temperature (T c =340 K). Hence, this material has emerged new applications in various fields. In this paper, VO 2 film on glass substrate were prepared and investigated in extremely high frequency (EHF) range (27-37 GHz). Then submicron holes arrays were formed on VO 2 films and their optical Raman spectra were studied.The special attention is paid on temperature dependence of the properties of films, holes and spheres. The study of EHF response of the nanosized VO 2 films reveals strong anomalies in the temperature range of metal-insulator transition. The RADIOELEKTRONIKI), ISSN 1684-1719, N2, 2018 2 submicron holes and arrays show strong change of the Raman spectra at the wavelength 530 nm due to heating by laser beam. Eventually, the optical properties of the homogeneous nonmagnetic VO 2 nanospheres embedded in the air are studied theoretically. The size effects on the optical properties of the VO 2 nanosphere are investigated and presented. In VO 2 nanosphere, converting into the metallic phase by heating leads to formation of a localized surface plasmon resonance (LSPR) which red shifts slightly by increasing dimension. The increment in the dimension of nanosphere in insulator case, results in the appearance of a peak in the visible wavelength most probably due to the excitation of combined electromagnetic modes. JOURNAL OF RADIO ELECTRONICS (ZHURNALThe optical spectra of VO 2 nanoparticle are much broader than that of silver nanosphere, which its associated localized electric field in form of dipolar mode is more intense than in VO 2 case. However, the LSPR of VO 2 can be thermally switched, making this material peculiar for recent advanced applications.

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Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Cited by 43 publications

References 28 publications

Ordered 3D Thin‐Shell Nanolattice Materials with Near‐Unity Refractive Indices

Ordered 3D Thin‐Shell Nanolattice Materials with Near‐Unity Refractive Indices

Preparation and Characterization of PSi/Si Electrochemically Formed as Photodetectors

The interaction of electromagnetic waves with VO2 nanosized spheres and films in optical and extremely high frequency range.

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