In this work, an integrated thermal gas flow sensor was fabricated and evaluated using a new thermal isolation technique based on a porous silicon membrane over an air cavity in silicon. The fabrication process of a thermal gas flow sensor employing this type of micro-hotplate is described together with the theoretical estimation of the thermal distribution around the heater of the sensor. Experimental results of the thermal isolation achieved are shown. A flow evaluation of the sensor is presented and discussed. All the results obtained are compared with the corresponding ones for an identical sensor using a micro-hotplate made of porous silicon membrane but without the air cavity underneath. The improvement achieved by the air cavity is evaluated.
An improvement of porous silicon technology for local thermal isolation on bulk crystalline silicon is presented. The technique consists of forming an air cavity below the porous layer to increase the thermal isolation efficiency. Both porous silicon and the cavity underneath are formed during the same electrochemical process in two steps: in step 1 the current density used is below a critical value, and in step 2 it is switched to a value above the critical current for electropolishing. In this way, porous silicon is formed first, followed by the formation of the cavity underneath. Experimental results and simulations are shown together with an application of this process in a thermal silicon flow sensor.
In this work, the masking technology for selective porous silicon formation by creating n-type areas on a p-type substrate by ion implantation was investigated and the optimum conditions were found. The most critical parameter in the process is the surface concentration of dopants. However, in all cases, some corrosion of the masking area was observed. The main efficiency-limiting factor of the technique is pointed out and a solution is proposed. The optimum conditions developed were used to fabricate suspended monocrystalline silicon membranes on bulk silicon.
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